SRM6N60TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRM6N60TF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.86 Ohm
Encapsulados: TO-220F
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SRM6N60TF datasheet
srm6n60.pdf
Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60 General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm6n70.pdf
Datasheet 6A, 700V, N-Channel Power MOSFET SRM6N70 General Description Symbol The Sanrise SRM6N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM6N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Otros transistores... SRM4N60TF, SRM4N65D1, SRM4N65DTR, SRM4N65U, SRM4N65TF, SRM4N70, SRM6N60D1, SRM6N60DTR, 60N06, SRM6N70, SRM7N60, SRM7N65, SRM7N65D1-E1, SRM7N65DTR-E1, SRM7N65TF-E1, SRM7N65TC-E1, SS05N70
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