SRM6N60TF Todos los transistores

 

SRM6N60TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRM6N60TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.03 V

Conductancia de drenaje-sustrato (Cd): 105 pF

Resistencia drenaje-fuente RDS(on): 1.86 Ohm

Empaquetado / Estuche: TO-220F

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SRM6N60TF Datasheet (PDF)

3.1. srm6n60.pdf Size:244K _upd

SRM6N60TF
SRM6N60TF

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60 General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

5.1. srm6n70.pdf Size:171K _upd

SRM6N60TF
SRM6N60TF

Datasheet 6A, 700V, N-Channel Power MOSFET SRM6N70 General Description Symbol The Sanrise SRM6N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM6N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a

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