IXTH13N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH13N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de IXTH13N80 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTH13N80 datasheet

 ..1. Size:98K  ixys
 ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf pdf_icon

IXTH13N80

VDSS ID25 RDS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFET IXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 11N80 11

 7.1. Size:46K  ixys
 ixth13n110.pdf pdf_icon

IXTH13N80

IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52

 8.1. Size:142K  ixys
 ixth130n10t ixtq130n10t.pdf pdf_icon

IXTH13N80

VDSS = 100V IXTH130N10T TrenchMVTM ID25 = 130A IXTQ130N10T Power MOSFET RDS(on) 9.1m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 130 A ILRMS Lead C

 8.2. Size:126K  ixys
 ixth130n20t.pdf pdf_icon

IXTH13N80

Preliminary Technical Information IXTH130N20T VDSS = 200V TrenchHVTM ID25 = 130A Power MOSFET RDS(on) 16m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1M 200 V VGSM Transient 30 V ID25 TC = 25 C 130 A ILRMS Lead Current Limit, RMS

MOSTRAR MÁS

Otros transistores... IXTH12N100, IXTH12N45MA, IXTH12N45MB, IXTH12N50A, IXTH12N50MA, IXTH12N50MB, IXTH12N90, IXTH13N110, K2611, IXTH14N100, IXTH14N80, IXTH15N35MA, IXTH15N35MB, IXTH15N40MA, IXTH15N40MB, IXTH15N60, IXTH20M60MB