All MOSFET. IXTH13N80 Datasheet

 

IXTH13N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH13N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 145 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO247

 IXTH13N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH13N80 Datasheet (PDF)

 ..1. Size:98K  ixys
 ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf

IXTH13N80 IXTH13N80

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

 7.1. Size:46K  ixys
 ixth13n110.pdf

IXTH13N80 IXTH13N80

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

 8.1. Size:142K  ixys
 ixth130n10t ixtq130n10t.pdf

IXTH13N80 IXTH13N80

VDSS = 100VIXTH130N10TTrenchMVTMID25 = 130AIXTQ130N10TPower MOSFET RDS(on) 9.1m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 VD(TAB)SVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 20 VTO-3P (IXTQ)ID25 TC = 25C 130 AILRMS Lead C

 8.2. Size:126K  ixys
 ixth130n20t.pdf

IXTH13N80 IXTH13N80

Preliminary Technical InformationIXTH130N20T VDSS = 200VTrenchHVTMID25 = 130APower MOSFET RDS(on) 16m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1M 200 VVGSM Transient 30 VID25 TC = 25C 130 AILRMS Lead Current Limit, RMS

 8.3. Size:260K  inchange semiconductor
 ixth130n10t.pdf

IXTH13N80 IXTH13N80

isc N-Channel MOSFET Transistor IXTH130N10TFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV G

Datasheet: IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IPSA70R360P7S , IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB , IXTH15N40MA , IXTH15N40MB , IXTH15N60 , IXTH20M60MB .

 

 
Back to Top