ST1002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST1002
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Paquete / Cubierta: SOT-23
ST1002 Datasheet (PDF)
st1002.pdf

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo
bst100.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBST100P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBST100D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel vertical D-MOS transistorDrain-source voltage -VDS max. 60 VT
st1004srg.pdf

ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi
st1005srg.pdf

ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
Otros transistores... SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , SS05N70 , SS07N70 , SSD80N03 , SSFM2506L , SSFM2508 , IRFZ44 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D , ST13P10 , ST2300 , ST2300SRG , ST2301A .
History: NTMFS5H425NL
History: NTMFS5H425NL



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