ST1002 Specs and Replacement

Type Designator: ST1002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT-23

ST1002 substitution

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ST1002 datasheet

 ..1. Size:716K  stansontech
 st1002.pdf pdf_icon

ST1002

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo... See More ⇒

 9.1. Size:67K  philips
 bst100.pdf pdf_icon

ST1002

DISCRETE SEMICONDUCTORS DATA SHEET BST100 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST100 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V T... See More ⇒

 9.2. Size:1277K  stansontech
 st1004srg.pdf pdf_icon

ST1002

ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi... See More ⇒

 9.3. Size:657K  stansontech
 st1005srg.pdf pdf_icon

ST1002

ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

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Detailed specifications: SRM7N65DTR-E1, SRM7N65TF-E1, SRM7N65TC-E1, SS05N70, SS07N70, SSD80N03, SSFM2506L, SSFM2508, IRFZ44, ST1004SRG, ST1005SRG, ST10E4, ST12N10D, ST13P10, ST2300, ST2300SRG, ST2301A

Keywords - ST1002 MOSFET specs

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