ST2300SRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2300SRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT-23

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ST2300SRG datasheet

 ..1. Size:479K  stansontech
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ST2300SRG

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

 7.1. Size:878K  cn vbsemi
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ST2300SRG

ST2300S23RG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 8.1. Size:383K  stansontech
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ST2300SRG

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

 8.2. Size:1440K  jestek
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ST2300SRG

JST2300 20V,5A N-Channel Mosfet PACKAGE FEATURES RDS(ON) 25m @VGS=4.5V RDS(ON) 38m @VGS=2.5V APPLICATIONS PWM Applications Load Switch Power Management MARKING N-CHANNEL MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5 A D Pl

Otros transistores... SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4, ST12N10D, ST13P10, ST2300, AO3400, ST2301A, ST2302, ST2303SRG, ST2304, ST2304SRG, ST2305, ST2305A, ST2318SRG