ST2300SRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2300SRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de ST2300SRG MOSFET
ST2300SRG Datasheet (PDF)
st2300srg.pdf

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n
st2300s23rg.pdf

ST2300S23RGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
st2300.pdf

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo
jst2300.pdf

JST230020V,5A N-Channel MosfetPACKAGEFEATURESRDS(ON) 25m @VGS=4.5VRDS(ON) 38m @VGS=2.5V APPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKINGN-CHANNEL MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V 20 VDSGate-Source Voltage V 12 VGSContinuous Drain Current I 5 ADPl
Otros transistores... SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D , ST13P10 , ST2300 , IRF3710 , ST2301A , ST2302 , ST2303SRG , ST2304 , ST2304SRG , ST2305 , ST2305A , ST2318SRG .
History: SSF6NS70UGS | SFB082N75C2 | B2N65 | JCS7N65SB | SJMN600R70MF | STB60NH02LT4 | IRFR3711ZCPBF
History: SSF6NS70UGS | SFB082N75C2 | B2N65 | JCS7N65SB | SJMN600R70MF | STB60NH02LT4 | IRFR3711ZCPBF



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