Справочник MOSFET. ST2300SRG

 

ST2300SRG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ST2300SRG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для ST2300SRG

 

 

ST2300SRG Datasheet (PDF)

 ..1. Size:479K  stansontech
st2300srg.pdf

ST2300SRG
ST2300SRG

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

 7.1. Size:878K  cn vbsemi
st2300s23rg.pdf

ST2300SRG
ST2300SRG

ST2300S23RGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 8.1. Size:383K  stansontech
st2300.pdf

ST2300SRG
ST2300SRG

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

 8.2. Size:1440K  jestek
jst2300.pdf

ST2300SRG
ST2300SRG

JST230020V,5A N-Channel MosfetPACKAGEFEATURESRDS(ON) 25m @VGS=4.5VRDS(ON) 38m @VGS=2.5V APPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKINGN-CHANNEL MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V 20 VDSGate-Source Voltage V 12 VGSContinuous Drain Current I 5 ADPl

 8.3. Size:980K  winsok
wst2300.pdf

ST2300SRG
ST2300SRG

WST2300 N-Ch MOSFETGeneral Description Product SummeryThe WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4Acharge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct

 8.4. Size:1208K  winsok
wst2300a.pdf

ST2300SRG
ST2300SRG

WST2300A N-Ch MOSFETGeneral Description Product SummeryThe WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0Agate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full

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