ST2300SRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ST2300SRG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: SOT-23
- подбор MOSFET транзистора по параметрам
ST2300SRG Datasheet (PDF)
st2300srg.pdf

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n
st2300s23rg.pdf

ST2300S23RGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
st2300.pdf

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo
jst2300.pdf

JST230020V,5A N-Channel MosfetPACKAGEFEATURESRDS(ON) 25m @VGS=4.5VRDS(ON) 38m @VGS=2.5V APPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKINGN-CHANNEL MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V 20 VDSGate-Source Voltage V 12 VGSContinuous Drain Current I 5 ADPl
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STN2342 | P0908ATF | 2SK2424 | 2SK4108 | JCS2N60MB | CM20N50P | AP9997GP-HF
History: STN2342 | P0908ATF | 2SK2424 | 2SK4108 | JCS2N60MB | CM20N50P | AP9997GP-HF



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