ST2301A Todos los transistores

 ..1. Size:187K  stansontech
 st2301a.pdf

ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not

 0.1. Size:1114K  winsok
 wst2301a.pdf

WST2301A P-Ch MOSFET General Description Product Summery The WST2301A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 140m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2301A meet the RoHS and Green Product requirement with full

 8.1. Size:592K  jestek
 jst2301h.pdf

JST2301H -20V,-3A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 110m @VGS=-4.5V RDS(ON) 140m @VGS=-2.5V APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING P-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -3 D Continuous Drain Current A Pulse

 8.2. Size:888K  winsok
 wst2301.pdf

WST2301 P-Ch MOSFET General Description Product Summery The WST2301 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 100m -2.9A charge for most of the small power switching and load switch applications. Applications The WST2301 meet the RoHS and Green Product requirement with full fu