ST3400S23RG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST3400S23RG
Código: A0YA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 9.7 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 240 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ST3400S23RG
ST3400S23RG Datasheet (PDF)
st3400s23rg.pdf
ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
st3400srg.pdf
ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and
wst3400s.pdf
WST3400S N-Ch MOSFETGeneral Description Product SummeryThe WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6Agate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu
jst3400.pdf
JST340030V,5.8AN-Channel MosfetFEATURESSOT-23RDS(ON) 33m @VGS=10VRDS(ON) 39m @VGS=4.5VRDS(ON) 60m @VGS=2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage V 12GSI 5.8DContinuous Drain
wst3400.pdf
WST3400 N-Ch MOSFETGeneral Description Product SummeryThe WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7Afor most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio
wst3400a.pdf
WST3400A N-Ch MOSFETGeneral Description Product SummeryThe WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4Agate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu
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