All MOSFET. ST3400S23RG Datasheet

 

ST3400S23RG MOSFET. Datasheet pdf. Equivalent


   Type Designator: ST3400S23RG
   Marking Code: A0YA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
   Maximum Drain Current |Id|: 5.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 9.7 nC
   Rise Time (tr): 10 nS
   Drain-Source Capacitance (Cd): 240 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
   Package: SOT-23

 ST3400S23RG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ST3400S23RG Datasheet (PDF)

 ..1. Size:397K  stansontech
 st3400s23rg.pdf

ST3400S23RG ST3400S23RG

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

 7.1. Size:543K  stansontech
 st3400srg.pdf

ST3400S23RG ST3400S23RG

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

 7.2. Size:578K  winsok
 wst3400s.pdf

ST3400S23RG ST3400S23RG

WST3400S N-Ch MOSFETGeneral Description Product SummeryThe WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6Agate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu

 8.1. Size:799K  jestek
 jst3400.pdf

ST3400S23RG ST3400S23RG

JST340030V,5.8AN-Channel MosfetFEATURESSOT-23RDS(ON) 33m @VGS=10VRDS(ON) 39m @VGS=4.5VRDS(ON) 60m @VGS=2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage V 12GSI 5.8DContinuous Drain

 8.2. Size:958K  winsok
 wst3400.pdf

ST3400S23RG ST3400S23RG

WST3400 N-Ch MOSFETGeneral Description Product SummeryThe WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7Afor most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio

 8.3. Size:1462K  winsok
 wst3400a.pdf

ST3400S23RG ST3400S23RG

WST3400A N-Ch MOSFETGeneral Description Product SummeryThe WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4Agate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top