ST3406 Todos los transistores

 ..1. Size:319K  stansontech
 st3406.pdf

ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

 0.1. Size:320K  stansontech
 st3406srg.pdf

ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.2. Size:1103K  winsok
 wst3406a.pdf

WST3406A N-Ch MOSFET General Description Product Summery The WST3406A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 18m 7A gate charge for most of the small power switching and load switch applications. Applications The WST3406A meet the RoHS and Green Product requirement with full func

 9.1. Size:169K  stansontech
 st3401m23rg.pdf

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

 9.2. Size:207K  stansontech
 st3401srg.pdf

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 9.3. Size:180K  stansontech
 st3407srg.pdf

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

 9.4. Size:397K  stansontech
 st3400s23rg.pdf

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

 9.5. Size:543K  stansontech
 st3400srg.pdf

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

 9.6. Size:148K  stansontech
 st3407s23rg.pdf

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

 9.7. Size:640K  jestek
 jst3401.pdf

JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 63m @VGS=-10V RDS(ON) 67m @VGS=-4.5V RDS(ON) 85m @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V 12 GS I -4.2 D Continuou

 9.8. Size:799K  jestek
 jst3400.pdf

JST3400 30V,5.8A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 33m @VGS=10V RDS(ON) 39m @VGS=4.5V RDS(ON) 60m @VGS=2.5V APPLICATIONS Load/Power Switching Interfacing Switching MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V 12 GS I 5.8 D Continuous Drain

 9.9. Size:1030K  winsok
 wst3401.pdf

WST3401 P-Ch MOSFET General Description Product Summery The WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5A for most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

 9.10. Size:1248K  winsok
 wst3404a.pdf

WST3404A N-Ch MOSFET General Description Product Summery The WST3404A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 30m 5.3A and gate charge for most of the synchronous buck converter applications . Applications The WST3404A meet the RoHS and Green Product requirement High Frequency Point-o

 9.11. Size:958K  winsok
 wst3400.pdf

WST3400 N-Ch MOSFET General Description Product Summery The WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7A for most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio

 9.12. Size:1969K  winsok
 wst3407a.pdf

WST3407A P-Ch MOSFET Product Summery General Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3407A meet the RoHS and Green Product requirement with full

 9.13. Size:920K  winsok
 wst3403.pdf

WST3403 P-Ch MOSFET General Description Product Summery The WST3403 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 60m -3.5A gate charge for most of the small power switching and load switch applications. Applications The WST3403 meet the RoHS and Green High Frequency Point-of-Load Sy

 9.14. Size:578K  winsok
 wst3400s.pdf

WST3400S N-Ch MOSFET General Description Product Summery The WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6A gate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu

 9.15. Size:943K  winsok
 wst3407.pdf

WST3407 P-Ch MOSFET Product Summery General Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8A for most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu

 9.16. Size:1456K  winsok
 wst3401a.pdf

WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0A gate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

 9.17. Size:601K  winsok
 wst3408.pdf

WST3408 N-Ch MOSFET General Description Product Summery The WST3408 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 26m 5.5A gate charge for most of the synchronous buck converter applications . Applications The WST3408 meet the RoHS and Green Product requirement with full High Frequenc

 9.18. Size:1462K  winsok
 wst3400a.pdf

WST3400A N-Ch MOSFET General Description Product Summery The WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4A gate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu