ST3406 MOSFET. Datasheet pdf. Equivalent

ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

WST3406A N-Ch MOSFETGeneral Description Product SummeryThe WST3406A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 18m 7Agate charge for most of the small power switching and load switch applications. Applications The WST3406A meet the RoHS and Green Product requirement with full func

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

JST3401-30V,-4.2AP-Channel MosfetFEATURESSOT-23RDS(ON) 63m @VGS=-10VRDS(ON) 67m @VGS=-4.5VRDS(ON) 85m @VGS=-2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingP-CHANNEL MOSFETMARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -30VGate-Source Voltage V 12GSI -4.2DContinuou

JST340030V,5.8AN-Channel MosfetFEATURESSOT-23RDS(ON) 33m @VGS=10VRDS(ON) 39m @VGS=4.5VRDS(ON) 60m @VGS=2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage V 12GSI 5.8DContinuous Drain

WST3401 P-Ch MOSFETGeneral Description Product SummeryThe WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5Afor most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

WST3404AN-Ch MOSFETGeneral Description Product SummeryThe WST3404A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 30m 5.3Aand gate charge for most of the synchronous buck converter applications . Applications The WST3404A meet the RoHS and Green Product requirement High Frequency Point-o

WST3400 N-Ch MOSFETGeneral Description Product SummeryThe WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7Afor most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio

WST3407AP-Ch MOSFETProduct SummeryGeneral Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3Agate charge for most of the small power switching and load switch applications.Applications The WST3407A meet the RoHS and Green Product requirement with full

WST3403 P-Ch MOSFETGeneral Description Product SummeryThe WST3403 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 60m -3.5Agate charge for most of the small power switching and load switch applications. Applications The WST3403 meet the RoHS and Green High Frequency Point-of-Load Sy

WST3400S N-Ch MOSFETGeneral Description Product SummeryThe WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6Agate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu

WST3407P-Ch MOSFETProduct SummeryGeneral Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8Afor most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu

WST3401A P-Ch MOSFETGeneral Description Product SummeryThe WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0Agate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

WST3408 N-Ch MOSFETGeneral Description Product SummeryThe WST3408 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 26m 5.5Agate charge for most of the synchronous buck converter applications . Applications The WST3408 meet the RoHS and Green Product requirement with full High Frequenc

WST3400A N-Ch MOSFETGeneral Description Product SummeryThe WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4Agate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu