ST3421SRG Todos los transistores

 

ST3421SRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST3421SRG

Código: 21YA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 16 nC

Tiempo de elevación (tr): 109 nS

Conductancia de drenaje-sustrato (Cd): 115 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: SOT-23

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ST3421SRG Datasheet (PDF)

1.1. st3421srg.pdf Size:418K _upd

ST3421SRG
ST3421SRG

 ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

5.1. st3422a.pdf Size:333K _upd

ST3421SRG
ST3421SRG

 ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

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