ST3421SRG - Даташиты. Аналоги. Основные параметры

ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

WST3420N-Ch MOSFETGeneral Description Product SummeryThe WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4Afor most of the small power switching and load switch applications.Applications The WST3420 meet the RoHS and Green Product requirement with full functio

WST3424 N-Ch MOSFETGeneral Description Product SummeryThe WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4Afor most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct

WST3426 N-Ch MOSFETGeneral Description Product SummeryThe WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0Acharge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct

WST3423 P-Ch MOSFETGeneral Description Product SummeryThe WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9Afor most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu

WST3427 P-Ch MOSFETGeneral Description Product SummeryThe WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5Acharge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu