SUD08P06-155L Todos los transistores

 

SUD08P06-155L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD08P06-155L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm

Encapsulados: TO-252

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SUD08P06-155L datasheet

 ..1. Size:79K  vishay
sud08p06-155l.pdf pdf_icon

SUD08P06-155L

New Product SUD08P06-155L Vishay Siliconix P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A) Qg (Typ) 175 C Rated Maximum Junction Temperature RoHS 0.155 at VGS = - 10 V - 8.4 - 60 12.5 COMPLIANT 0.280 at VGS = - 4.5 V - 7.4 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information

 0.1. Size:169K  vishay
sud08p06-155l-ge3.pdf pdf_icon

SUD08P06-155L

SUD08P06-155L-GE3 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES DPAK (TO-252) DPAK ( TrenchFET power MOSFETs Material categorization Drain connected to tab for definitions of compliance please see www.vishay.com/doc?99912 S S D G G Top View PRODUCT SUMMARY VDS (V) -60 RDS(on) max. ( ) at VGS = -10 V 0.155 D RDS(on) max. ( ) at VGS =

 0.2. Size:829K  cn vbsemi
sud08p06-155l-e3.pdf pdf_icon

SUD08P06-155L

SUD08P06-155L-E3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parame

 2.1. Size:1423K  cn vbsemi
sud08p06-155.pdf pdf_icon

SUD08P06-155L

SUD08P06-155 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter

Otros transistores... ST47P06D , ST75N75 , ST9435A , ST9435GP , SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , NCEP15T14 , SUD09P10-195 , SUD15N15-95 , SUD17N25-165 , SUD19N20-90 , SUD19P06-60 , SUD19P06-60L , SUD20N10-66L , SUD20P15-306 .

History: BRI50N06 | 4N65KL-TA3-T | JBL101N | AP02N60J-H | IRF7322D1PBF | SUD23N06-31L | BRI65R380C

 

 

 

 

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