SUD08P06-155L MOSFET Datasheet: P-Ch, 60V, 8.4A. Full specification with pinout and replacement list

SUD08P06-155L Specs and Replacement

Type Designator: SUD08P06-155L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO-252

SUD08P06-155L substitution

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SUD08P06-155L datasheet

..1. Size:79K vishay
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New Product SUD08P06-155L Vishay Siliconix P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A) Qg (Typ) 175 C Rated Maximum Junction Temperature RoHS 0.155 at VGS = - 10 V - 8.4 - 60 12.5 COMPLIANT 0.280 at VGS = - 4.5 V - 7.4 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information ... See More ⇒

0.1. Size:169K vishay
sud08p06-155l-ge3.pdf pdf_icon

SUD08P06-155L-GE3 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES DPAK (TO-252) DPAK ( TrenchFET power MOSFETs Material categorization Drain connected to tab for definitions of compliance please see www.vishay.com/doc?99912 S S D G G Top View PRODUCT SUMMARY VDS (V) -60 RDS(on) max. ( ) at VGS = -10 V 0.155 D RDS(on) max. ( ) at VGS =... See More ⇒

0.2. Size:829K cn vbsemi
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SUD08P06-155L-E3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parame... See More ⇒

2.1. Size:1423K cn vbsemi
sud08p06-155.pdf pdf_icon

SUD08P06-155 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter ... See More ⇒

Detailed specifications: ST47P06D, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, NCEP15T14, SUD09P10-195, SUD15N15-95, SUD17N25-165, SUD19N20-90, SUD19P06-60, SUD19P06-60L, SUD20N10-66L, SUD20P15-306