SUD23N06-31 Todos los transistores

 

SUD23N06-31 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUD23N06-31
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO-252

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SUD23N06-31 Datasheet (PDF)

 ..1. Size:152K  vishay
sud23n06-31.pdf

SUD23N06-31
SUD23N06-31

SUD23N06-31Vishay SiliconixN-Channel 60 V (D-S), MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V 9.1 TrenchFET Power MOSFET60 6.5 nC0.045 at VGS = 4.5 V 7.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 DC/DC Converte

 ..2. Size:773K  cn vbsemi
sud23n06-31.pdf

SUD23N06-31
SUD23N06-31

SUD23N06-31www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.1. Size:72K  vishay
sud23n06-31l.pdf

SUD23N06-31
SUD23N06-31

SUD23N06-31LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.031 at VGS = 10 V 23RoHS*600.045 at VGS = 4.5 V 19.5 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETOrdering Information: SUD23

 0.2. Size:1347K  cn vbsemi
sud23n06-31l.pdf

SUD23N06-31
SUD23N06-31

SUD23N06-31Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

 6.1. Size:135K  vishay
sud23n06.pdf

SUD23N06-31
SUD23N06-31

SUD23N06-31Vishay SiliconixN-Channel 60 V (D-S), MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V 9.1 TrenchFET Power MOSFET60 6.5 nC0.045 at VGS = 4.5 V 7.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 DC/DC Converte

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History: APM2509NU | CS55N10

 

 
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History: APM2509NU | CS55N10

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