All MOSFET. SUD23N06-31 Datasheet

 

SUD23N06-31 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD23N06-31
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 21.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-252

 SUD23N06-31 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD23N06-31 Datasheet (PDF)

 ..1. Size:152K  vishay
 sud23n06-31.pdf

SUD23N06-31 SUD23N06-31

SUD23N06-31Vishay SiliconixN-Channel 60 V (D-S), MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V 9.1 TrenchFET Power MOSFET60 6.5 nC0.045 at VGS = 4.5 V 7.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 DC/DC Converte

 ..2. Size:773K  cn vbsemi
 sud23n06-31.pdf

SUD23N06-31 SUD23N06-31

SUD23N06-31www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.1. Size:72K  vishay
 sud23n06-31l.pdf

SUD23N06-31 SUD23N06-31

SUD23N06-31LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.031 at VGS = 10 V 23RoHS*600.045 at VGS = 4.5 V 19.5 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETOrdering Information: SUD23

 0.2. Size:1347K  cn vbsemi
 sud23n06-31l.pdf

SUD23N06-31 SUD23N06-31

SUD23N06-31Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

 6.1. Size:135K  vishay
 sud23n06.pdf

SUD23N06-31 SUD23N06-31

SUD23N06-31Vishay SiliconixN-Channel 60 V (D-S), MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.031 at VGS = 10 V 9.1 TrenchFET Power MOSFET60 6.5 nC0.045 at VGS = 4.5 V 7.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 DC/DC Converte

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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