IXTH15N60 Todos los transistores

 

IXTH15N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH15N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXTH15N60 Datasheet (PDF)

 ..1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH15N60

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 7.1. Size:681K  1
 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf pdf_icon

IXTH15N60

 7.2. Size:148K  ixys
 ixth15n70.pdf pdf_icon

IXTH15N60

IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T

 7.3. Size:65K  ixys
 ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf pdf_icon

IXTH15N60

MOSTRAR MÁS

Otros transistores... IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB , IXTH15N40MA , IXTH15N40MB , 8205A , IXTH20M60MB , IXTH20N55MA , IXTH20N55MB , IXTH20N60 , IXTH20N60MA , IXTH21N50 , IXTH23N25MA , IXTH23N25MB .

History: AFN12N60T220FT | WFY3N02 | APT904R2AN | SVS11N60TD2 | SVF7N60CF | IRF7309IPBF | IRF3710ZSPBF

 

 
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