IXTH15N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH15N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 150 nC
Tiempo de subida (tr): 43 nS
Conductancia de drenaje-sustrato (Cd): 420 pF
Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
Paquete / Cubierta: TO247
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IXTH15N60 Datasheet (PDF)
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IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T
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Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30
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