SUD45P04-16P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD45P04-16P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0162 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET SUD45P04-16P

SUD45P04-16P Datasheet (PDF)

..1. Size:149K vishay
sud45p04-16p.pdf

SUD45P04-16PVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0162 at VGS = - 10 V- 36- 40 67 100 % Rg and UIS Tested0.0230 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Po

7.1. Size:77K vishay
sud45p03-15a.pdf

SUD45P03-15ANew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)a0.015 @ VGS = 10 V 1530300.024 @ VGS = 4.5 V 12STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD45P03-15AP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-So

7.2. Size:140K vishay
sud45p03-10.pdf

SUD45P03-10Vishay SiliconixP-Channel 30-V (D-S), MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)aRoHS 0.010 at VGS = - 10 V - 15COMPLIANT - 300.018 at VGS = - 4.5 V - 12STO-252GDrain Connected to TabG D SDTop ViewP-Channel MOSFETOrdering Information: SUD45P03-10-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA

7.3. Size:166K vishay
sud45p03-09.pdf

SUD45P03-09Vishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0087 at VGS = - 10 V- 45d TrenchFET Power MOSFET- 30 600.0150 at VGS = - 4.5 V - 32 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch

7.4. Size:64K vishay
sud45p03-15.pdf

SUD45P03-15SiliconixP-Channel 30-V (D-S), 150_C MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)a0.015 @ VGS = 10 V "1330300.024 @ VGS = 4.5 V "8STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD45P03-15P-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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