All MOSFET. SUD45P04-16P Datasheet

 

SUD45P04-16P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD45P04-16P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0162 Ohm
   Package: TO-252

 SUD45P04-16P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD45P04-16P Datasheet (PDF)

 ..1. Size:149K  vishay
 sud45p04-16p.pdf

SUD45P04-16P SUD45P04-16P

SUD45P04-16PVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0162 at VGS = - 10 V- 36- 40 67 100 % Rg and UIS Tested0.0230 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Po

 7.1. Size:77K  vishay
 sud45p03-15a.pdf

SUD45P04-16P SUD45P04-16P

SUD45P03-15ANew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)a0.015 @ VGS = 10 V 1530300.024 @ VGS = 4.5 V 12STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD45P03-15AP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-So

 7.2. Size:140K  vishay
 sud45p03-10.pdf

SUD45P04-16P SUD45P04-16P

SUD45P03-10Vishay SiliconixP-Channel 30-V (D-S), MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)aRoHS 0.010 at VGS = - 10 V - 15COMPLIANT - 300.018 at VGS = - 4.5 V - 12STO-252GDrain Connected to TabG D SDTop ViewP-Channel MOSFETOrdering Information: SUD45P03-10-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA

 7.3. Size:166K  vishay
 sud45p03-09.pdf

SUD45P04-16P SUD45P04-16P

SUD45P03-09Vishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0087 at VGS = - 10 V- 45d TrenchFET Power MOSFET- 30 600.0150 at VGS = - 4.5 V - 32 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch

 7.4. Size:64K  vishay
 sud45p03-15.pdf

SUD45P04-16P SUD45P04-16P

SUD45P03-15SiliconixP-Channel 30-V (D-S), 150_C MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)a0.015 @ VGS = 10 V "1330300.024 @ VGS = 4.5 V "8STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD45P03-15P-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30

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History: SUP90N08-7M7P | NDP6050L | IXFT14N100 | SIS478DN | FQD19N10LTF

 

 
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