SUD50N024-09P Todos los transistores

 ..1. Size:59K  vishay
 sud50n024-09p.pdf

SUD50N024-09P Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)d D PWM Optimized for High Efficiency 0.0095 @ VGS = 10 V 49 24c 24c APPLICATIONS 0.017 @ VGS = 4.5 V 36 D High-Side Synchronous Buck DC/DC D Conversion TO-252 - Desktop - Server G Drain Connected to Tab

 3.1. Size:40K  vishay
 sud50n024-06p.pdf

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)d D 175_C Junction Temperature D PWM Optimized for High Efficiency 0.006 @ VGS = 10 V 80 24C 24C APPLICATIONS 0.0095 @ VGS = 4.5 V 64 D Synchronous Buck DC/DC Conversion - Desktop D - Server TO-252 G Drain Connected to Tab

 6.1. Size:143K  vishay
 sud50n02-04p.pdf

SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25

 6.2. Size:105K  vishay
 sud50n025-09bp.pdf

SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0086 @ VGS = 10 V 62 RoHS 25 18 5 nC 25 18.5 nC COMPLIANT 0.012 @ VGS = 4.5 V 52 APPLICATIONS D DC/DC Conversion, High-Side Desktop PC TO-252 D G Drain Connected to Tab G D

 6.3. Size:65K  vishay
 sud50n02-06.pdf

SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

 6.4. Size:58K  vishay
 sud50n02-09p.pdf

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)a D PWM Optimized for High Efficiency D 100% Rg Tested 0.0095 @ VGS = 10 V 20 20 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop D TO-252 - Server G Drain Conn

 6.5. Size:103K  vishay
 sud50n025-06p.pdf

SUD50N025-06P New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0062 @ VGS = 10 V 78 25 20 5 nC 25 20.5 nC 0.010 @ VGS = 4.5 V 62 APPLICATIONS D DC/DC Conversion, Low-Side - Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S Ord

 6.6. Size:158K  vishay
 sud50n02-06p.pdf

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0060 at VGS = 10 V PWM Optimized for High Efficiency 26 20 0.0095 at VGS = 4.5 V 100 % Rg Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC C