SUD50N025-06P Todos los transistores

 

SUD50N025-06P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD50N025-06P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: TO-252

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SUD50N025-06P datasheet

 ..1. Size:103K  vishay
sud50n025-06p.pdf pdf_icon

SUD50N025-06P

SUD50N025-06P New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0062 @ VGS = 10 V 78 25 20 5 nC 25 20.5 nC 0.010 @ VGS = 4.5 V 62 APPLICATIONS D DC/DC Conversion, Low-Side - Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S Ord

 3.1. Size:105K  vishay
sud50n025-09bp.pdf pdf_icon

SUD50N025-06P

SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0086 @ VGS = 10 V 62 RoHS 25 18 5 nC 25 18.5 nC COMPLIANT 0.012 @ VGS = 4.5 V 52 APPLICATIONS D DC/DC Conversion, High-Side Desktop PC TO-252 D G Drain Connected to Tab G D

 6.1. Size:143K  vishay
sud50n02-04p.pdf pdf_icon

SUD50N025-06P

SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25

 6.2. Size:65K  vishay
sud50n02-06.pdf pdf_icon

SUD50N025-06P

SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

Otros transistores... SUD45P03-10 , SUD45P03-15 , SUD45P04-16P , SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , SUD50N02-09P , SUD50N024-09P , 7N60 , SUD50N03-06AP , SUD50N03-06P , SUD50N03-09P , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P , SUD50N04-05L , SUD50N04-09H .

History: AP03N70P-H | 2SK125 | BM3415E | AP02N60J-H | STW45NM50FD | IRF7331PBF-1 | BRI65R380C

 

 

 

 

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