SUD50N025-06P
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD50N025-06P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 78
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062
Ohm
Package:
TO-252
SUD50N025-06P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD50N025-06P
Datasheet (PDF)
..1. Size:103K vishay
sud50n025-06p.pdf 
SUD50N025-06PNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0062 @ VGS = 10 V 7825 20 5 nC25 20.5 nC0.010 @ VGS = 4.5 V 62APPLICATIONSD DC/DC Conversion, Low-Side- Desktop PCTO-252DGDrain Connected to TabG D STop ViewSOrd
3.1. Size:105K vishay
sud50n025-09bp.pdf
SUD50N025-09BPNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0086 @ VGS = 10 V 62 RoHS25 18 5 nC25 18.5 nCCOMPLIANT0.012 @ VGS = 4.5 V 52APPLICATIONSD DC/DC Conversion, High-Side Desktop PCTO-252DGDrain Connected to TabG D
6.1. Size:143K vishay
sud50n02-04p.pdf
SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25
6.2. Size:65K vishay
sud50n02-06.pdf
SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T
6.3. Size:58K vishay
sud50n02-09p.pdf
SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn
6.4. Size:59K vishay
sud50n024-09p.pdf
SUD50N024-09PVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)dD PWM Optimized for High Efficiency0.0095 @ VGS = 10 V 4924c24cAPPLICATIONS0.017 @ VGS = 4.5 V 36D High-Side Synchronous Buck DC/DCDConversionTO-252- Desktop- ServerGDrain Connected to Tab
6.5. Size:158K vishay
sud50n02-06p.pdf
SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C
6.6. Size:40K vishay
sud50n024-06p.pdf
SUD50N024-06PNew ProductVishay SiliconixN-Channel 22-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)d D 175_C Junction TemperatureD PWM Optimized for High Efficiency0.006 @ VGS = 10 V 8024C24CAPPLICATIONS0.0095 @ VGS = 4.5 V 64D Synchronous Buck DC/DC Conversion- DesktopD - ServerTO-252GDrain Connected to Tab
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
