All MOSFET. SUD50N025-06P Datasheet

 

SUD50N025-06P Datasheet and Replacement


   Type Designator: SUD50N025-06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO-252
 

 SUD50N025-06P substitution

   - MOSFET ⓘ Cross-Reference Search

 

SUD50N025-06P Datasheet (PDF)

 ..1. Size:103K  vishay
sud50n025-06p.pdf pdf_icon

SUD50N025-06P

SUD50N025-06PNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0062 @ VGS = 10 V 7825 20 5 nC25 20.5 nC0.010 @ VGS = 4.5 V 62APPLICATIONSD DC/DC Conversion, Low-Side- Desktop PCTO-252DGDrain Connected to TabG D STop ViewSOrd

 3.1. Size:105K  vishay
sud50n025-09bp.pdf pdf_icon

SUD50N025-06P

SUD50N025-09BPNew ProductVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D 100% Rg TestedD RoHS Compliant0.0086 @ VGS = 10 V 62 RoHS25 18 5 nC25 18.5 nCCOMPLIANT0.012 @ VGS = 4.5 V 52APPLICATIONSD DC/DC Conversion, High-Side Desktop PCTO-252DGDrain Connected to TabG D

 6.1. Size:143K  vishay
sud50n02-04p.pdf pdf_icon

SUD50N025-06P

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

 6.2. Size:65K  vishay
sud50n02-06.pdf pdf_icon

SUD50N025-06P

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

Datasheet: SUD45P03-10 , SUD45P03-15 , SUD45P04-16P , SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , SUD50N02-09P , SUD50N024-09P , MMIS60R580P , SUD50N03-06AP , SUD50N03-06P , SUD50N03-09P , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P , SUD50N04-05L , SUD50N04-09H .

History: F5020-S | SPU07N60C3

Keywords - SUD50N025-06P MOSFET datasheet

 SUD50N025-06P cross reference
 SUD50N025-06P equivalent finder
 SUD50N025-06P lookup
 SUD50N025-06P substitution
 SUD50N025-06P replacement

 

 
Back to Top

 


 
.