SUD50N03-09P Todos los transistores

 

SUD50N03-09P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUD50N03-09P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 63 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET SUD50N03-09P

 

Principales características: SUD50N03-09P

 ..1. Size:149K  vishay
sud50n03-09p.pdf pdf_icon

SUD50N03-09P

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)b Available Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS DC/DC Converters Synchronous Rectifiers TO-252 D Drain Connected to T

 4.1. Size:95K  vishay
sud50n03-07.pdf pdf_icon

SUD50N03-09P

SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.007 @ VGS = 10 V 20 30 30 0.010 @ VGS = 4.5 V 16 D TO-252 G Drain Connected to Tab G D S Top View Ordering Information S SUD50N03-07 SUD50N03-07 E3 ( Lead Free) N-Channel MOS

 4.2. Size:63K  vishay
sud50n03-06p.pdf pdf_icon

SUD50N03-09P

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175 _C Junction Temperature VDS (V) rDS(on) (W) ID (A)b D Optimized for Low-Side Synchronous Rectifier * Operation 0.0065 at VGS = 10 V 84b 30 30 D 100 % Rg Tested 0.0095 at VGS = 4.5 V 59b APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Dr

 4.3. Size:90K  vishay
sud50n03-06ap.pdf pdf_icon

SUD50N03-09P

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D Optimized for Low Side Synchronous Rectifier Operation 0.0057 @ VGS = 10 V 90 RoHS 30 30 30 30 COMPLIANT D 100% Rg Tested 0.0078 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D

Otros transistores... SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , SUD50N02-09P , SUD50N024-09P , SUD50N025-06P , SUD50N03-06AP , SUD50N03-06P , IRF830 , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P , SUD50N04-05L , SUD50N04-09H , SUD50N04-37P , SUD50N04-8M8P , SUD50N06-07L .

History: JCS10N60FT | JCS22N50ABC | SRC11N65TC | SPA11N60C3 | R6007JNX | SQM110N04-03L

 

 
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