SUD50N03-09P - параметры транзистора MOSFET, его аналоги, datasheet

SUD50N03-09P Datasheet (PDF)

..1. Size:149K vishay
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SUD50N03-09PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)bAvailable Optimized for High- or Low-Side0.0095 at VGS = 10 V 63bRoHS* 100 % Rg Tested30COMPLIANT0.014 at VGS = 4.5 V 52bAPPLICATIONS DC/DC Converters Synchronous RectifiersTO-252DDrain Connected to T

4.1. Size:95K vishay
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SUD50N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.007 @ VGS = 10 V 2030300.010 @ VGS = 4.5 V 16DTO-252GDrain Connected to TabG D STop ViewOrdering Information: SSUD50N03-07SUD50N03-07E3 ( Lead Free) N-Channel MOS

4.2. Size:63K vishay
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SUD50N03-06PVishay SiliconixN-Channel 30-V (D-S) 175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175 _C Junction TemperatureVDS (V) rDS(on) (W) ID (A)bD Optimized for Low-Side Synchronous Rectifier *Operation0.0065 at VGS = 10 V 84b3030 D 100 % Rg Tested0.0095 at VGS = 4.5 V 59bAPPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252DDr

4.3. Size:90K vishay
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SUD50N03-06APNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D Optimized for LowSide SynchronousRectifier Operation0.0057 @ VGS = 10 V 90 RoHS30 3030 30COMPLIANTD 100% Rg Tested0.0078 @ VGS = 4.5 V 77APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252D

Другие MOSFET... SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , SUD50N02-09P , SUD50N024-09P , SUD50N025-06P , SUD50N03-06AP , SUD50N03-06P , IRF1405 , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P , SUD50N04-05L , SUD50N04-09H , SUD50N04-37P , SUD50N04-8M8P , SUD50N06-07L .