SUD50N03-11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUD50N03-11Vishay SiliconixN-Channel 30-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Maximum Junction TemperatureRoHS0.011 at VGS = 10 V 50COMPLIANT 30 100 % Rg Tested0.017 at VGS = 4.5 V 43DTO-252GDrain Connected to TabG D SSTop ViewOrdering Information: SUD50N03-11-E3 (Lead

SUD50N03-16PNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD PWM OptimizedVDS (V) rDS(on) (W) ID (A)aD 100% Rg Tested0.016 @ VGS = 10 V 15APPLICATIONS30300.024 @ VGS = 4.5 V 12D High-Side DC/DC- Desktop- ServerDD DDR DC/DC ConverterTO-252GDrain Connected to TabG D STop ViewSOrdering Inform

SUD50N03-10SiliconixN-Channel 30-V (D-S), 175_C MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V "1530300.019 @ VGS = 4.5 V "12DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N03-10N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-

SUD50N03-12PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 100 % Rg and UIS Tested0.0120 at VGS = 10 V 17.5 Compliant to RoHS Directive 2002/95/EC300.0175 at VGS = 4.5 V 14.5TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N03-12P-E3 (Lead (PB) fr