SUD50N03-16P Todos los transistores

 ..1. Size:73K  vishay
 sud50n03-16p.pdf

SUD50N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D PWM Optimized VDS (V) rDS(on) (W) ID (A)a D 100% Rg Tested 0.016 @ VGS = 10 V 15 APPLICATIONS 30 30 0.024 @ VGS = 4.5 V 12 D High-Side DC/DC - Desktop - Server D D DDR DC/DC Converter TO-252 G Drain Connected to Tab G D S Top View S Ordering Inform

 4.1. Size:141K  vishay
 sud50n03-11.pdf

SUD50N03-11 Vishay Siliconix N-Channel 30-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Maximum Junction Temperature RoHS 0.011 at VGS = 10 V 50 COMPLIANT 30 100 % Rg Tested 0.017 at VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S S Top View Ordering Information SUD50N03-11-E3 (Lead

 4.2. Size:108K  vishay
 sud50n03-10.pdf

SUD50N03-10 Siliconix N-Channel 30-V (D-S), 175_C MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "15 30 30 0.019 @ VGS = 4.5 V "12 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N03-10 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-

 4.3. Size:157K  vishay
 sud50n03-12p.pdf

SUD50N03-12P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 100 % Rg and UIS Tested 0.0120 at VGS = 10 V 17.5 Compliant to RoHS Directive 2002/95/EC 30 0.0175 at VGS = 4.5 V 14.5 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N03-12P-E3 (Lead (PB) fr