SUD50N06-08H Todos los transistores

 

SUD50N06-08H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUD50N06-08H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 136 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 93 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 13 nS
   Conductancia de drenaje-sustrato (Cd): 450 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0078 Ohm
   Paquete / Cubierta: TO-252

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SUD50N06-08H Datasheet (PDF)

 ..1. Size:70K  vishay
sud50n06-08h.pdf

SUD50N06-08H
SUD50N06-08H

New ProductSUD50N06-08HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)c Qg (Typ) 175 C Junction Temperature0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High TemperatureTO-252DGDrain Connected to TabG D STop ViewSOrdering In

 4.1. Size:69K  vishay
sud50n06-07l.pdf

SUD50N06-08H
SUD50N06-08H

New ProductSUD50N06-07LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0074 at VGS = 10 V RoHS 9660COMPLIANT 0.0088 at VGS = 4.5 V 88DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-07L-E3 (Lead (Pb)-

 4.2. Size:157K  vishay
sud50n06-09l.pdf

SUD50N06-08H
SUD50N06-08H

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.0093 at VGS = 10 V 50 Material categorization:600.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912TO-252DGDrain Connected

 4.3. Size:899K  cn vbsemi
sud50n06-09l.pdf

SUD50N06-08H
SUD50N06-08H

SUD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

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