All MOSFET. SUD50N06-08H Datasheet

 

SUD50N06-08H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD50N06-08H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 93 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO-252

 SUD50N06-08H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD50N06-08H Datasheet (PDF)

 ..1. Size:70K  vishay
 sud50n06-08h.pdf

SUD50N06-08H SUD50N06-08H

New ProductSUD50N06-08HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)c Qg (Typ) 175 C Junction Temperature0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High TemperatureTO-252DGDrain Connected to TabG D STop ViewSOrdering In

 4.1. Size:69K  vishay
 sud50n06-07l.pdf

SUD50N06-08H SUD50N06-08H

New ProductSUD50N06-07LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0074 at VGS = 10 V RoHS 9660COMPLIANT 0.0088 at VGS = 4.5 V 88DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-07L-E3 (Lead (Pb)-

 4.2. Size:157K  vishay
 sud50n06-09l.pdf

SUD50N06-08H SUD50N06-08H

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.0093 at VGS = 10 V 50 Material categorization:600.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912TO-252DGDrain Connected

 4.3. Size:899K  cn vbsemi
 sud50n06-09l.pdf

SUD50N06-08H SUD50N06-08H

SUD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top