SUD50P04-08 Todos los transistores

 

SUD50P04-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUD50P04-08
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0081 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

SUD50P04-08 Datasheet (PDF)

 ..1. Size:165K  vishay
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SUD50P04-08

SUD50P04-08www.vishay.comVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0081 at VGS = -10 V -50 d-40 60 Material categorization:0.0117 at VGS = -4.5 V -48 dfor definitions of compliance please see www.vishay.com/doc?99912 TO-252TOAPPLICATIONS

 ..2. Size:1492K  cn vbsemi
sud50p04-08.pdf pdf_icon

SUD50P04-08

SUD50P04-08www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

 ..3. Size:206K  inchange semiconductor
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SUD50P04-08

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P04-08FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS

 4.1. Size:88K  vishay
sud50p04-09l.pdf pdf_icon

SUD50P04-08

SUD50P04-09LVishay SiliconixP-Channel 40 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)d 175 C Junction Temperature0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC- 400.0145 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD50P04

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AP18T10GH | SW601Q | ME60N03A | STP16NM50N | FTK40P04D | IPAN60R600P7S | SI2369DS

 

 
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