Справочник MOSFET. SUD50P04-08

 

SUD50P04-08 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUD50P04-08
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 73.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 106 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 570 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0081 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для SUD50P04-08

 

 

SUD50P04-08 Datasheet (PDF)

 ..1. Size:165K  vishay
sud50p04-08.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-08www.vishay.comVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0081 at VGS = -10 V -50 d-40 60 Material categorization:0.0117 at VGS = -4.5 V -48 dfor definitions of compliance please see www.vishay.com/doc?99912 TO-252TOAPPLICATIONS

 ..2. Size:1492K  cn vbsemi
sud50p04-08.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-08www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

 ..3. Size:206K  inchange semiconductor
sud50p04-08.pdf

SUD50P04-08 SUD50P04-08

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P04-08FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS

 4.1. Size:88K  vishay
sud50p04-09l.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-09LVishay SiliconixP-Channel 40 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)d 175 C Junction Temperature0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC- 400.0145 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD50P04

 4.2. Size:889K  cn vbsemi
sud50p04-09l-e3.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-09L-E3www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25

 5.1. Size:80K  vishay
sud50p04-13l.pdf

SUD50P04-08 SUD50P04-08

New ProductSUD50P04-13LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) 175 C Junction Temperature0.013 at VGS = - 10 V - 60aRoHS- 40COMPLIANT 0.022 at VGS = - 4.5 V - 48STO-252GDrain Connected to TabG D STop ViewDOrdering Information: SUD50P04-13L-E3 (Lead (Pb)-

 5.2. Size:64K  vishay
sud50p04-15.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-15New ProductVishay SiliconixP-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.015 @ VGS = 10 V 5040400.023 @ VGS = 4.5 V 45STO-252GDrain Connected to TabG D STop ViewOrder Number: DSUD50P04-15P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrai

 5.3. Size:93K  vishay
sud50p04-23.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-23Vishay SiliconixP-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg TestedRoHS 0.023 at VGS = 10 V - 20COMPLIANT - 40 20.6 nC0.030 at VGS = 4.5 V - 20APPLICATIONS LCD TV InverterTO-252SGDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering

 5.4. Size:174K  vishay
sud50p04-40p.pdf

SUD50P04-08 SUD50P04-08

New ProductSUD50P04-40PVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS0.040 at VGS = - 10 V - 8COMPLIANT - 40 17 nC0.050 at VGS = - 4.5 V - 8APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC ConverterSTO-252GDrain Connec

 5.5. Size:935K  cn vbsemi
sud50p04-13l.pdf

SUD50P04-08 SUD50P04-08

SUD50P04-13Lwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,

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