SUD50P06-15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD50P06-15
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 113 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET SUD50P06-15

SUD50P06-15 Datasheet (PDF)

..1. Size:154K vishay
sud50p06-15.pdf

SUD50P06-15Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.015 at VGS = - 10 V For definitions of compliance please see- 50d- 60www.vishay.com/doc?999120.020 at VGS = - 4.5 V - 50dAPPLICATIONSTO-252 Load SwitchSGDrain Connected to TabDG STop V

..2. Size:881K cn vbsemi
sud50p06-15.pdf

SUD50P06-15www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

..3. Size:254K inchange semiconductor
sud50p06-15.pdf

Isc P-Channel MOSFET Transistor SUD50P06-15FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

0.1. Size:70K vishay
sud50p06-15l.pdf

SUD50P06-15LVishay SiliconixP-Channel 60 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.015 at VGS = - 10 V - 50d- 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC0.020 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop ViewDOrdering Informa

0.2. Size:819K cn vbsemi
sud50p06-15l-ge3.pdf

SUD50P06-15L-GE3www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

6.1. Size:120K vishay
sud50p06.pdf

SUD50P06-15Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.015 at VGS = - 10 V - 50dCOMPLIANT - 600.020 at VGS = - 4.5 V - 50dAPPLICATIONS Load SwitchSTO-252GDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering Information: SUD50P06-15-GE

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: