SUD50P06-15 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SUD50P06-15
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 113 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 110 nC
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 480 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO-252
Аналог (замена) для SUD50P06-15
SUD50P06-15 Datasheet (PDF)
sud50p06-15.pdf
SUD50P06-15Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.015 at VGS = - 10 V For definitions of compliance please see- 50d- 60www.vishay.com/doc?999120.020 at VGS = - 4.5 V - 50dAPPLICATIONSTO-252 Load SwitchSGDrain Connected to TabDG STop V
sud50p06-15.pdf
SUD50P06-15www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete
sud50p06-15.pdf
Isc P-Channel MOSFET Transistor SUD50P06-15FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
sud50p06-15l.pdf
SUD50P06-15LVishay SiliconixP-Channel 60 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.015 at VGS = - 10 V - 50d- 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC0.020 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop ViewDOrdering Informa
sud50p06-15l-ge3.pdf
SUD50P06-15L-GE3www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
sud50p06.pdf
SUD50P06-15Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.015 at VGS = - 10 V - 50dCOMPLIANT - 600.020 at VGS = - 4.5 V - 50dAPPLICATIONS Load SwitchSTO-252GDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering Information: SUD50P06-15-GE
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