Справочник MOSFET. SUD50P06-15

 

SUD50P06-15 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUD50P06-15
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 113 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 110 nC
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 480 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для SUD50P06-15

 

 

SUD50P06-15 Datasheet (PDF)

 ..1. Size:154K  vishay
 sud50p06-15.pdf

SUD50P06-15 SUD50P06-15

SUD50P06-15Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.015 at VGS = - 10 V For definitions of compliance please see- 50d- 60www.vishay.com/doc?999120.020 at VGS = - 4.5 V - 50dAPPLICATIONSTO-252 Load SwitchSGDrain Connected to TabDG STop V

 ..2. Size:881K  cn vbsemi
 sud50p06-15.pdf

SUD50P06-15 SUD50P06-15

SUD50P06-15www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

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 sud50p06-15.pdf

SUD50P06-15 SUD50P06-15

Isc P-Channel MOSFET Transistor SUD50P06-15FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 0.1. Size:70K  vishay
 sud50p06-15l.pdf

SUD50P06-15 SUD50P06-15

SUD50P06-15LVishay SiliconixP-Channel 60 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.015 at VGS = - 10 V - 50d- 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC0.020 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop ViewDOrdering Informa

 0.2. Size:819K  cn vbsemi
 sud50p06-15l-ge3.pdf

SUD50P06-15 SUD50P06-15

SUD50P06-15L-GE3www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

 6.1. Size:120K  vishay
 sud50p06.pdf

SUD50P06-15 SUD50P06-15

SUD50P06-15Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.015 at VGS = - 10 V - 50dCOMPLIANT - 600.020 at VGS = - 4.5 V - 50dAPPLICATIONS Load SwitchSTO-252GDrain Connected to TabG D STop ViewDP-Channel MOSFETOrdering Information: SUD50P06-15-GE

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