SUD50P10-43 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUD50P10-43 Datasheet (PDF)

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SUD50P10-43New ProductVishay SiliconixP-Channel 100-V (D-S) 175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a Qg (Typ)RoHS100 0.043 at VGS = 10 V 38 105 nCCOMPLIANTTO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P10-43E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA =

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SUD50P10-43LVishay SiliconixP-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/ECRoHS0.043 at VGS = - 10 V - 37COMPLIANT - 100 54 nC0.048 at VGS = - 4.5 V - 35TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P10-43L-E

0.2. Size:1498K cn vbsemi
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SUD50P10-43Lwww.VBsemi.tw P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Direc

0.3. Size:208K inchange semiconductor
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INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P10-43LFEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower Supply- Secondary Synchronous RectificationPower toolsMotor drive switchBattery managementABSOLUTE M

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