SUD50P10-43 Todos los transistores

 

SUD50P10-43 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD50P10-43

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 115 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm

Encapsulados: TO-252

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SUD50P10-43 datasheet

 ..1. Size:84K  vishay
sud50p10-43.pdf pdf_icon

SUD50P10-43

SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) RoHS 100 0.043 at VGS = 10 V 38 105 nC COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P10-43 E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =

 0.1. Size:142K  vishay
sud50p10-43l.pdf pdf_icon

SUD50P10-43

SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/EC RoHS 0.043 at VGS = - 10 V - 37 COMPLIANT - 100 54 nC 0.048 at VGS = - 4.5 V - 35 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P10-43L-E

 0.2. Size:1498K  cn vbsemi
sud50p10-43l.pdf pdf_icon

SUD50P10-43

SUD50P10-43L www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Direc

 0.3. Size:208K  inchange semiconductor
sud50p10-43l.pdf pdf_icon

SUD50P10-43

INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P10-43L FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE M

Otros transistores... SUD50P04-13L , SUD50P04-15 , SUD50P04-23 , SUD50P04-40P , SUD50P06-15 , SUD50P06-15L , SUD50P08-25L , SUD50P08-26 , IRFP460 , SUD50P10-43L , SUM09N20-270 , SUM110N03-03P , SUM110N03-04P , SUM110N04-03 , SUM110N04-03P , SUM110N04-04 , SUM110N04-05H .

History: APT5014B2VFRG | SI3812DV | WSP6064

 

 

 

 

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