SUD50P10-43L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUD50P10-43L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37.1 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 106 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET SUD50P10-43L
SUD50P10-43L Datasheet (PDF)
sud50p10-43l.pdf
SUD50P10-43LVishay SiliconixP-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/ECRoHS0.043 at VGS = - 10 V - 37COMPLIANT - 100 54 nC0.048 at VGS = - 4.5 V - 35TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P10-43L-E
sud50p10-43l.pdf
SUD50P10-43Lwww.VBsemi.tw P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Direc
sud50p10-43l.pdf
INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P10-43LFEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONPower Supply- Secondary Synchronous RectificationPower toolsMotor drive switchBattery managementABSOLUTE M
sud50p10-43.pdf
SUD50P10-43New ProductVishay SiliconixP-Channel 100-V (D-S) 175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a Qg (Typ)RoHS100 0.043 at VGS = 10 V 38 105 nCCOMPLIANTTO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P10-43E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA =
sud50p10.pdf
SUD50P10-43LVishay SiliconixP-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/ECRoHS0.043 at VGS = - 10 V - 37COMPLIANT - 100 54 nC0.048 at VGS = - 4.5 V - 35TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD50P10-43L-E
sud50p04-13l.pdf
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sud50p04-15.pdf
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sud50p04-23.pdf
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sud50p06-15.pdf
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sud50p08-26.pdf
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sud50p04-40p.pdf
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sud50p06.pdf
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sud50p04-09l.pdf
SUD50P04-09LVishay SiliconixP-Channel 40 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A)d 175 C Junction Temperature0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC- 400.0145 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop View DOrdering Information: SUD50P04
sud50p06-15l.pdf
SUD50P06-15LVishay SiliconixP-Channel 60 V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.015 at VGS = - 10 V - 50d- 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC0.020 at VGS = - 4.5 V - 50STO-252GDrain Connected to TabG D STop ViewDOrdering Informa
sud50p04-08.pdf
SUD50P04-08www.vishay.comVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) 100 % Rg and UIS tested0.0081 at VGS = -10 V -50 d-40 60 Material categorization:0.0117 at VGS = -4.5 V -48 dfor definitions of compliance please see www.vishay.com/doc?99912 TO-252TOAPPLICATIONS
sud50p04-13l.pdf
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sud50p06-15.pdf
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sud50p06-15l-ge3.pdf
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sud50p04-09l-e3.pdf
SUD50P04-09L-E3www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25
sud50p04-08.pdf
SUD50P04-08www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C,
sud50p06-15.pdf
Isc P-Channel MOSFET Transistor SUD50P06-15FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
sud50p04-08.pdf
INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD50P04-08FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS
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