SUD50P10-43L. Аналоги и основные параметры
Наименование производителя: SUD50P10-43L
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 136 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 37.1 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 230 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
Тип корпуса: TO-252
Аналог (замена) для SUD50P10-43L
- подборⓘ MOSFET транзистора по параметрам
SUD50P10-43L даташит
..1. Size:142K vishay
sud50p10-43l.pdf 

SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/EC RoHS 0.043 at VGS = - 10 V - 37 COMPLIANT - 100 54 nC 0.048 at VGS = - 4.5 V - 35 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P10-43L-E
..2. Size:1498K cn vbsemi
sud50p10-43l.pdf 

SUD50P10-43L www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Direc
..3. Size:208K inchange semiconductor
sud50p10-43l.pdf 

INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P10-43L FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE M
3.1. Size:84K vishay
sud50p10-43.pdf 

SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) RoHS 100 0.043 at VGS = 10 V 38 105 nC COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P10-43 E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =
6.1. Size:141K vishay
sud50p10.pdf 

SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Compliant to RoHS Directive 2002/95/EC RoHS 0.043 at VGS = - 10 V - 37 COMPLIANT - 100 54 nC 0.048 at VGS = - 4.5 V - 35 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P10-43L-E
8.1. Size:80K vishay
sud50p04-13l.pdf 

New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) 175 C Junction Temperature 0.013 at VGS = - 10 V - 60a RoHS - 40 COMPLIANT 0.022 at VGS = - 4.5 V - 48 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04-13L-E3 (Lead (Pb)-
8.2. Size:64K vishay
sud50p04-15.pdf 

SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 50 40 40 0.023 @ VGS = 4.5 V 45 S TO-252 G Drain Connected to Tab G D S Top View Order Number D SUD50P04-15 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drai
8.3. Size:93K vishay
sud50p04-23.pdf 

SUD50P04-23 Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested RoHS 0.023 at VGS = 10 V - 20 COMPLIANT - 40 20.6 nC 0.030 at VGS = 4.5 V - 20 APPLICATIONS LCD TV Inverter TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering
8.4. Size:82K vishay
sud50p08-25l.pdf 

New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) RoHS 0.0252 at VGS = - 10 V - 50 COMPLIANT - 80 55 nC 0.029 at VGS = - 4.5 V - 47 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P08-25L-E3 (Lead (Pb)-free) P-Channel MOSFET
8.5. Size:154K vishay
sud50p06-15.pdf 

SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.015 at VGS = - 10 V For definitions of compliance please see - 50d - 60 www.vishay.com/doc?99912 0.020 at VGS = - 4.5 V - 50d APPLICATIONS TO-252 Load Switch S G Drain Connected to Tab D G S Top V
8.6. Size:82K vishay
sud50p08-26.pdf 

New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) RoHS 0.026 at VGS = - 10 V - 50 102 nC - 80 COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P08-26-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA =
8.7. Size:174K vishay
sud50p04-40p.pdf 

New Product SUD50P04-40P Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.040 at VGS = - 10 V - 8 COMPLIANT - 40 17 nC 0.050 at VGS = - 4.5 V - 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter S TO-252 G Drain Connec
8.8. Size:120K vishay
sud50p06.pdf 

SUD50P06-15 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET RoHS 0.015 at VGS = - 10 V - 50d COMPLIANT - 60 0.020 at VGS = - 4.5 V - 50d APPLICATIONS Load Switch S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information SUD50P06-15-GE
8.9. Size:88K vishay
sud50p04-09l.pdf 

SUD50P04-09L Vishay Siliconix P-Channel 40 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) ID (A)d 175 C Junction Temperature 0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC - 40 0.0145 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04
8.10. Size:70K vishay
sud50p06-15l.pdf 

SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.015 at VGS = - 10 V - 50d - 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Informa
8.11. Size:165K vishay
sud50p04-08.pdf 

SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0081 at VGS = -10 V -50 d -40 60 Material categorization 0.0117 at VGS = -4.5 V -48 d for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO APPLICATIONS
8.12. Size:935K cn vbsemi
sud50p04-13l.pdf 

SUD50P04-13L www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,
8.13. Size:881K cn vbsemi
sud50p06-15.pdf 

SUD50P06-15 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete
8.14. Size:819K cn vbsemi
sud50p06-15l-ge3.pdf 

SUD50P06-15L-GE3 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par
8.16. Size:1492K cn vbsemi
sud50p04-08.pdf 

SUD50P04-08 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,
8.17. Size:254K inchange semiconductor
sud50p06-15.pdf 

Isc P-Channel MOSFET Transistor SUD50P06-15 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
8.18. Size:206K inchange semiconductor
sud50p04-08.pdf 

INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P04-08 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS
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History: 2SK1638
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