SUM90P10-19 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUM90P10-19
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 218 nC
   trⓘ - Tiempo de subida: 720 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SUM90P10-19

SUM90P10-19 Datasheet (PDF)

..1. Size:112K vishay
sum90p10-19.pdf

New ProductSUM90P10-19Vishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ)RoHS0.019 at VGS = - 10 V - 90 128 nC- 100COMPLIANTTO-263SGDrain Connected to TabG D STop View DP-Channel MOSFETOrdering Information: SUM90P10-19-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25

0.1. Size:178K vishay
sum90p10-19l.pdf

SUM90P10-19LVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Compliant to RoHS Directive 2002/95/EC0.019 at VGS = - 10 V - 90- 100 97 nC0.021 at VGS = - 4.5 V - 85STO-263 GDrain Connected to Tab G D S DTop View P-Channel MOSFETOrdering Information: SUM90P10-19L-E3 (Lead

6.1. Size:178K vishay
sum90p10.pdf

9.1. Size:76K vishay
sum90n06-5m0p sup90n06-5m0p.pdf

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

9.2. Size:77K vishay
sum90n06-4m4p.pdf

SUM90N06-4m4PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0044 at VGS = 10 V60 RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification Industrial OR-ingDTO-263 GG

9.3. Size:165K vishay
sum90n08-6m2p.pdf

SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie

9.4. Size:165K vishay
sum90n06-5m5p.pdf

SUM90N06-5m5PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0055 at VGS = 10 V60 RoHS90d 78.5 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V

9.5. Size:114K vishay
sum90n03.pdf

New ProductSUM90N03-2m2PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0022 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0027 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerDTO-263GG D STop ViewSOrdering Information: SUM90N03-2m

9.6. Size:177K vishay
sum90n03-2m2p.pdf

SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing

9.7. Size:168K vishay
sum90n08-7m6p.pdf

SUM90N08-7m6PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature0.0076 at VGS = 10 V75 RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V

9.8. Size:162K vishay
sum90n10-8m2p.pdf

SUM90N10-8m2PVishay SiliconixN Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0082 at VGS = 10 V100COMPLIANT90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous Rectification

9.9. Size:181K vishay
sum90n04-3m3p.pdf

New ProductSUM90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg and UIS TestedRoHS Compliant to RoHS Directive 2002/95/EC COMPLIANT 0.0033 at VGS = 10 V9040 870.0041 at VGS = 4.5 V90APPLICATIONS Power Supply- Secondary Synchronous Rectifica

9.10. Size:84K vishay
sum90n08-4m8p.pdf

SUM90N08-4m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0048 at VGS = 10 VRoHS90d75 105 100 % UIS Tested COMPLIANT0.006 at VGS = 8 V90dAPPLICATIONS Power Supply- Half-Bridge- Secondary Synchronous Rectification Industri

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