SUM90P10-19 Todos los transistores

 ..1. Size:112K  vishay
 sum90p10-19.pdf

New Product SUM90P10-19 Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) RoHS 0.019 at VGS = - 10 V - 90 128 nC - 100 COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information SUM90P10-19-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25

 0.1. Size:178K  vishay
 sum90p10-19l.pdf

SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Compliant to RoHS Directive 2002/95/EC 0.019 at VGS = - 10 V - 90 - 100 97 nC 0.021 at VGS = - 4.5 V - 85 S TO-263 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information SUM90P10-19L-E3 (Lead

 6.1. Size:178K  vishay
 sum90p10.pdf

SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Compliant to RoHS Directive 2002/95/EC 0.019 at VGS = - 10 V - 90 - 100 97 nC 0.021 at VGS = - 4.5 V - 85 S TO-263 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information SUM90P10-19L-E3 (Lead

 9.1. Size:76K  vishay
 sum90n06-5m0p sup90n06-5m0p.pdf

SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 60 0.005 at VGS = 10 V RoHS 90d 105 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB OR-ing D G G

 9.2. Size:77K  vishay
 sum90n06-4m4p.pdf

SUM90N06-4m4P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.0044 at VGS = 10 V 60 RoHS 90d 105 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial OR-ing D TO-263 G G

 9.3. Size:165K  vishay
 sum90n08-6m2p.pdf

SUM90N08-6m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.0062 at VGS = 10 V 75 RoHS 90d 75 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial D TO-263 G G D S Top Vie

 9.4. Size:165K  vishay
 sum90n06-5m5p.pdf

SUM90N06-5m5P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.0055 at VGS = 10 V 60 RoHS 90d 78.5 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial D TO-263 G G D S Top V

 9.5. Size:114K  vishay
 sum90n03.pdf

New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0022 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0027 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server D TO-263 G G D S Top View S Ordering Information SUM90N03-2m

 9.6. Size:177K  vishay
 sum90n03-2m2p.pdf

SUM90N03-2m2P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0022 at VGS = 10 V 90 30 82 nC For definitions of compliance please see 0.0027 at VGS = 4.5 V 90 www.vishay.com/doc?99912 TO-263 APPLICATIONS D OR-ing

 9.7. Size:168K  vishay
 sum90n08-7m6p.pdf

SUM90N08-7m6P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 0.0076 at VGS = 10 V 75 RoHS 90d 58 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial D TO-263 G G D S Top V

 9.8. Size:162K  vishay
 sum90n10-8m2p.pdf

SUM90N10-8m2P Vishay Siliconix N Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.0082 at VGS = 10 V 100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification

 9.9. Size:181K  vishay
 sum90n04-3m3p.pdf

New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg and UIS Tested RoHS Compliant to RoHS Directive 2002/95/EC COMPLIANT 0.0033 at VGS = 10 V 90 40 87 0.0041 at VGS = 4.5 V 90 APPLICATIONS Power Supply - Secondary Synchronous Rectifica

 9.10. Size:84K  vishay
 sum90n08-4m8p.pdf

SUM90N08-4m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.0048 at VGS = 10 V RoHS 90d 75 105 100 % UIS Tested COMPLIANT 0.006 at VGS = 8 V 90d APPLICATIONS Power Supply - Half-Bridge - Secondary Synchronous Rectification Industri