SUM90P10-19 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SUM90P10-19
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 90 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 218 nC
Время нарастания (tr): 720 ns
Выходная емкость (Cd): 700 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.019 Ohm
Тип корпуса: TO-263
Аналог (замена) для SUM90P10-19
SUM90P10-19 Datasheet (PDF)
sum90p10-19.pdf
New ProductSUM90P10-19Vishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ)RoHS0.019 at VGS = - 10 V - 90 128 nC- 100COMPLIANTTO-263SGDrain Connected to TabG D STop View DP-Channel MOSFETOrdering Information: SUM90P10-19-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25
sum90p10-19l.pdf
SUM90P10-19LVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Compliant to RoHS Directive 2002/95/EC0.019 at VGS = - 10 V - 90- 100 97 nC0.021 at VGS = - 4.5 V - 85STO-263 GDrain Connected to Tab G D S DTop View P-Channel MOSFETOrdering Information: SUM90P10-19L-E3 (Lead
sum90p10.pdf
SUM90P10-19LVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Compliant to RoHS Directive 2002/95/EC0.019 at VGS = - 10 V - 90- 100 97 nC0.021 at VGS = - 4.5 V - 85STO-263 GDrain Connected to Tab G D S DTop View P-Channel MOSFETOrdering Information: SUM90P10-19L-E3 (Lead
sum90n06-5m0p sup90n06-5m0p.pdf
SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG
sum90n06-4m4p.pdf
SUM90N06-4m4PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0044 at VGS = 10 V60 RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification Industrial OR-ingDTO-263 GG
sum90n08-6m2p.pdf
SUM90N08-6m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0062 at VGS = 10 V75 RoHS90d 75 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top Vie
sum90n06-5m5p.pdf
SUM90N06-5m5PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0055 at VGS = 10 V60 RoHS90d 78.5 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V
sum90n03.pdf
New ProductSUM90N03-2m2PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0022 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0027 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerDTO-263GG D STop ViewSOrdering Information: SUM90N03-2m
sum90n03-2m2p.pdf
SUM90N03-2m2PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0022 at VGS = 10 V 9030 82 nCFor definitions of compliance please see0.0027 at VGS = 4.5 V 90www.vishay.com/doc?99912TO-263APPLICATIONSD OR-ing
sum90n08-7m6p.pdf
SUM90N08-7m6PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature0.0076 at VGS = 10 V75 RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialDTO-263 GG D S Top V
sum90n10-8m2p.pdf
SUM90N10-8m2PVishay SiliconixN Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.0082 at VGS = 10 V100COMPLIANT90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous Rectification
sum90n04-3m3p.pdf
New ProductSUM90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg and UIS TestedRoHS Compliant to RoHS Directive 2002/95/EC COMPLIANT 0.0033 at VGS = 10 V9040 870.0041 at VGS = 4.5 V90APPLICATIONS Power Supply- Secondary Synchronous Rectifica
sum90n08-4m8p.pdf
SUM90N08-4m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.0048 at VGS = 10 VRoHS90d75 105 100 % UIS Tested COMPLIANT0.006 at VGS = 8 V90dAPPLICATIONS Power Supply- Half-Bridge- Secondary Synchronous Rectification Industri
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