SUP50N10-21P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUP50N10-21P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 227 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de SUP50N10-21P MOSFET
SUP50N10-21P Datasheet (PDF)
sup50n10-21p.pdf

SUP50N10-21PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Qg (Typ.)ID (A) 100 % Rg and UIS Tested0.021 at VGS = 10 V Material categorization:50dFor definitions of compliance please see 100 0.023 at VGS = 8 V 30.2 nC49.7www.vishay.com/doc?999120.028 at VGS = 6 V45APPLICATIONS
sup50n03.pdf

SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco
sup50n03-5m1p.pdf

SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco
Otros transistores... SUP25P10-138 , SUP28N15-52 , SUP36N20-54P , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , IRFZ48N , SUP53P06-20 , SUP57N20-33 , SUP60N02-4M5P , SUP60N06-12P , SUP60N10-16L , SUP60N10-18P , SUP65P04-15 , SUP70N03-09BP .
History: 2SJ216 | C2M090W035 | STD16NF25 | IRF3256 | NCE60R360F | HX2302 | HX2301
History: 2SJ216 | C2M090W035 | STD16NF25 | IRF3256 | NCE60R360F | HX2302 | HX2301



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor