SUP50N10-21P MOSFET Datasheet: N-Ch, 100V, 50A. Full specification with pinout and replacement list

SUP50N10-21P Specs and Replacement

Type Designator: SUP50N10-21P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO-220AB

SUP50N10-21P substitution

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SUP50N10-21P datasheet

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SUP50N10-21P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. Qg (Typ.) ID (A) 100 % Rg and UIS Tested 0.021 at VGS = 10 V Material categorization 50d For definitions of compliance please see 100 0.023 at VGS = 8 V 30.2 nC 49.7 www.vishay.com/doc?99912 0.028 at VGS = 6 V 45 APPLICATIONS... See More ⇒

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SUP50N03-5m1P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0051 at VGS = 10 V 50d TrenchFET Power MOSFET 30 21.7 0.0063 at VGS = 4.5 V 50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Seco... See More ⇒

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