SUP50N10-21P Datasheet and Replacement
Type Designator: SUP50N10-21P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 227 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO-220AB
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SUP50N10-21P Datasheet (PDF)
sup50n10-21p.pdf
SUP50N10-21PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Qg (Typ.)ID (A) 100 % Rg and UIS Tested0.021 at VGS = 10 V Material categorization:50dFor definitions of compliance please see 100 0.023 at VGS = 8 V 30.2 nC49.7www.vishay.com/doc?999120.028 at VGS = 6 V45APPLICATIONS
sup50n03.pdf
SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco
sup50n03-5m1p.pdf
SUP50N03-5m1PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0051 at VGS = 10 V50d TrenchFET Power MOSFET30 21.70.0063 at VGS = 4.5 V50d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Seco
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - SUP50N10-21P MOSFET datasheet
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History: GSM3030 | IRF6612
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