SUP60N10-16L Todos los transistores

 ..1. Size:48K  vishay
 sup60n10-16l.pdf

SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A) D 175_C Junction Temperature 0.016 @ VGS = 10 V 60 D PWM Optimized 100 100 0.018 @ VGS = 4.5 V 56 APPLICATIONS D DC/DC Primary Side Switch D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP60N10-16L ABS

 4.1. Size:176K  vishay
 sup60n10-18p.pdf

SUP60N10-18P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0183 at VGS = 10 V 60 100 48 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 8.0 V 53 APPLICATIONS Industrial Power Supply TO-220AB D G G D S S Top View Ordering Inf

 6.1. Size:175K  vishay
 sup60n10.pdf

SUP60N10-18P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0183 at VGS = 10 V 60 100 48 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 8.0 V 53 APPLICATIONS Industrial Power Supply TO-220AB D G G D S S Top View Ordering Inf

 8.1. Size:162K  vishay
 sup60n06.pdf

 8.2. Size:164K  vishay
 sup60n06-12p.pdf

 8.3. Size:171K  vishay
 sup60n02.pdf

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0045 at VGS = 10 V 60 100 % Rg Tested COMPLIANT 20 0.0065 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing TO-220AB D DRAIN connected to TAB G G D S Top

 8.4. Size:173K  vishay
 sup60n02-4m5p.pdf

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0045 at VGS = 10 V 60 100 % Rg Tested COMPLIANT 20 0.0065 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing TO-220AB D DRAIN connected to TAB G G D S Top

 8.5. Size:100K  vishay
 sup60n06-18 sub60n06-18.pdf

SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S G D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V V Gate-Sourc