SUP60N10-16L
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUP60N10-16L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 73
nC
trⓘ - Rise Time: 90
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO-220AB
SUP60N10-16L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUP60N10-16L
Datasheet (PDF)
..1. Size:48K vishay
sup60n10-16l.pdf 
SUP60N10-16LVishay SiliconixN-Channel 100-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)D 175_C Junction Temperature0.016 @ VGS = 10 V 60D PWM Optimized1001000.018 @ VGS = 4.5 V 56APPLICATIONSD DC/DC Primary Side SwitchDTO-220ABGDRAIN connected to TABG D SSTop ViewN-Channel MOSFETSUP60N10-16LABS
4.1. Size:176K vishay
sup60n10-18p.pdf
SUP60N10-18PVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0183 at VGS = 10 V60100 48 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 8.0 V53APPLICATIONS Industrial Power SupplyTO-220AB D G G D S S Top View Ordering Inf
6.1. Size:175K vishay
sup60n10.pdf
SUP60N10-18PVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0183 at VGS = 10 V60100 48 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 8.0 V53APPLICATIONS Industrial Power SupplyTO-220AB D G G D S S Top View Ordering Inf
8.1. Size:162K vishay
sup60n06.pdf
SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier
8.2. Size:164K vishay
sup60n06-12p.pdf
SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier
8.3. Size:171K vishay
sup60n02.pdf
SUP60N02-4m5PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0045 at VGS = 10 V60 100 % Rg Tested COMPLIANT 200.0065 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingTO-220ABDDRAIN connected to TABGG D STop
8.4. Size:173K vishay
sup60n02-4m5p.pdf
SUP60N02-4m5PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0045 at VGS = 10 V60 100 % Rg Tested COMPLIANT 200.0065 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingTO-220ABDDRAIN connected to TABGG D STop
8.5. Size:100K vishay
sup60n06-18 sub60n06-18.pdf
SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc
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