IXTH24N50MB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH24N50MB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO247

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IXTH24N50MB datasheet

 5.1. Size:108K  ixys
 ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf pdf_icon

IXTH24N50MB

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 21N50 21 A

 8.1. Size:204K  ixys
 ixth240n055t ixtq240n055t.pdf pdf_icon

IXTH24N50MB

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240

 8.2. Size:337K  ixys
 ixtt240n15x4hv ixth240n15x4.pdf pdf_icon

IXTH24N50MB

Advance Technical Information X4-Class VDSS = 150V IXTT240N15X4HV Power MOSFETTM ID25 = 240A IXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 175 C 150 V D (Tab) VDGR TJ = 25 C to 175 C, RGS = 1M 150 V TO-247 (IXTH) VGSS Cont

MOSTRAR MÁS

Otros transistores... IXTH20N60MA, IXTH21N50, IXTH23N25MA, IXTH23N25MB, IXTH24N45MA, IXTH24N45MB, IXTH24N50, IXTH24N50MA, IRF640, IXTH27N35MA, IXTH27N35MB, IXTH27N40MA, IXTH27N40MB, IXTH30N45, IXTH30N50, IXTH31N15MA, IXTH31N15MB