IXTH24N50MB Specs and Replacement
Type Designator: IXTH24N50MB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO247
IXTH24N50MB substitution
IXTH24N50MB datasheet
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 21N50 21 A... See More ⇒
ixth240n055t ixtq240n055t.pdf
Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240... See More ⇒
ixtt240n15x4hv ixth240n15x4.pdf
Advance Technical Information X4-Class VDSS = 150V IXTT240N15X4HV Power MOSFETTM ID25 = 240A IXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 175 C 150 V D (Tab) VDGR TJ = 25 C to 175 C, RGS = 1M 150 V TO-247 (IXTH) VGSS Cont... See More ⇒
Detailed specifications: IXTH20N60MA , IXTH21N50 , IXTH23N25MA , IXTH23N25MB , IXTH24N45MA , IXTH24N45MB , IXTH24N50 , IXTH24N50MA , IRF640 , IXTH27N35MA , IXTH27N35MB , IXTH27N40MA , IXTH27N40MB , IXTH30N45 , IXTH30N50 , IXTH31N15MA , IXTH31N15MB .
Keywords - IXTH24N50MB MOSFET specs
IXTH24N50MB cross reference
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IXTH24N50MB substitution
IXTH24N50MB replacement
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