All MOSFET. IXTH24N50MB Datasheet

 

IXTH24N50MB MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH24N50MB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: TO247

IXTH24N50MB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTH24N50MB Datasheet (PDF)

1.1. ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf Size:108K _ixys

IXTH24N50MB
IXTH24N50MB

VDSS ID25 RDS(on) MegaMOSTMFET ? IXTH / IXTM 21N50 500 V 21 A 0.25 ? ? ? ? ? IXTH / IXTM 24N50 500 V 24 A 0.23 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 21N50 21 A TO-204 AE (IXTM) 24N50 24 A

4.1. ixth240n055t ixtq240n055t.pdf Size:204K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25 C 240 A ILRMS Lead Current Limit, R

 5.1. ixth2n170d2 ixtt2n170d2.pdf Size:172K _ixys

IXTH24N50MB
IXTH24N50MB

Depletion Mode VDSX = 1700V IXTT2N170D2 MOSFETs ID(on) > 2A IXTH2N170D2 ≤ Ω RDS(on) ≤ 6.5Ω ≤ Ω ≤ Ω ≤ Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700 V VGSX Continuous ±20 V G VGSM Transient ±30 V D D (Tab) S PD TC = 25°C 568 W G = Gate

5.2. ixth250n075t ixtq250n075t.pdf Size:204K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH250N075T VDSS = 75 V TrenchMVTM IXTQ250N075T ID25 = 250 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V TO-3P (IXTQ) VGSM Transient 20 V ID25 TC = 25 C 250 A

 5.3. ixth20n60 ixtm20n60.pdf Size:105K _ixys

IXTH24N50MB
IXTH24N50MB

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A ? RDS(on) = 0.35 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25C, pulse width limited by T

5.4. ixth220n075t ixtq220n075t.pdf Size:185K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C75 V G (TAB) D VDGR TJ = 25C to 175C; RGS = 1 M? 75 V S VGSM Transient 20 V ID25 TC = 25C 220 A TO-3P (IXTQ) ILR

 5.5. ixth200n085t ixtq200n085t.pdf Size:205K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS Lead Current Limit,

5.6. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

IXTH24N50MB
IXTH24N50MB

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5.7. ixth220n055t ixtq220n055t.pdf Size:204K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 220

5.8. ixth2n300p3hv ixtt2n300p3hv.pdf Size:202K _ixys

IXTH24N50MB
IXTH24N50MB

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV   RDS(on)    21     TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 3000 V VDGR TJ = 25C to 150C, RGS = 1M 3000 V VGSS Continuous 20 V V

5.9. ixth230n085t ixtq230n085t.pdf Size:205K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH230N085T VDSS = 85 V TrenchMVTM IXTQ230N085T ID25 = 230 A Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 175C 85 V S VDGR TJ = 25C to 175C; RGS = 1 M? 85 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25C 230 A I

5.10. ixta20n65x ixth20n65x ixtp20n65x.pdf Size:231K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X   RDS(on)    210m     IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VG

5.11. ixth260n055t2.pdf Size:166K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information VDSS = 55V TrenchT2TM Power IXTH260N055T2 ID25 = 260A MOSFET ? ? RDS(on) ? ? ? 3.3m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C55 V G VDGR TJ = 25C to 175C, RGS = 1M? 55 V (TAB) D S VGSM Transient 20 V ID25 TC = 25C 260 A G = Gate D = Drain ILRMS Lead Curren

5.12. ixth200n075t ixtq200n075t.pdf Size:184K _ixys

IXTH24N50MB
IXTH24N50MB

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 200 A ILRMS Lead Current Limit, RMS 7

5.13. ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf Size:163K _ixys

IXTH24N50MB
IXTH24N50MB

Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4   RDS(on)    2.4m     IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C40 V G D D (Tab) S VDGR TJ = 25C to 175C, RG

5.14. ixth2n150.pdf Size:140K _ixys

IXTH24N50MB
IXTH24N50MB

Advance Technical Information High Voltage VDSS = 1500V IXTH2N150 ID25 = 2A Power MOSFET   RDS(on)  9.2       N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G

5.15. ixth2n150l.pdf Size:109K _ixys

IXTH24N50MB
IXTH24N50MB

Advance Technical Information LinearTM Power MOSFET VDSS = 1500V IXTH2N150L ID25 = 2A w/Extended FBSOA   RDS(on)    15     N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25C to 150C 1500 V S = Source Tab = Drain VDGR TJ = 25C to 150C

5.16. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

IXTH24N50MB
IXTH24N50MB

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Transient 40 V ID25 TC = 25

5.17. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

IXTH24N50MB
IXTH24N50MB

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

Datasheet: IXTH20N60MA , IXTH21N50 , IXTH23N25MA , IXTH23N25MB , IXTH24N45MA , IXTH24N45MB , IXTH24N50 , IXTH24N50MA , IRF630 , IXTH27N35MA , IXTH27N35MB , IXTH27N40MA , IXTH27N40MB , IXTH30N45 , IXTH30N50 , IXTH31N15MA , IXTH31N15MB .

 
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