SUP75P03-07
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUP75P03-07
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 187
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 75
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 225
nS
Cossⓘ - Capacitancia
de salida: 1565
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007
Ohm
Paquete / Cubierta:
TO-220AB
- Selección de transistores por parámetros
SUP75P03-07
Datasheet (PDF)
..1. Size:143K vishay
sub75p03-07 sup75p03-07.pdf 
SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In
..2. Size:144K vishay
sub75p03-07 sup75p03-07.pdf
SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In
4.1. Size:55K vishay
sup75p03-08 sub75p03-08.pdf
SUP/SUB75P03-08Vishay SiliconixP-Channel 30-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)30 0.008 75aSTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB75P03-08Top ViewP-Channel MOSFETSUP75P03-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 2
7.1. Size:71K vishay
sup75p05-08 sup75p05-08 sub75p05-08.pdf
SUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)55 0.008 75aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB75P05-08SUP75P05-08 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS
9.1. Size:72K 1
sup75n06-08 sub75n06-08.pdf
SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous
9.2. Size:67K vishay
sup75n03-07 sub75n03-07.pdf
SUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 V 75a30300.01 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N03-07Top ViewN-Channel MOSFETSUP75N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra
9.3. Size:74K vishay
sup75n05-06 sub75n05-06.pdf
SUP/SUB75N05-06Vishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-06Top ViewN-Channel MOSFETSUP75N05-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75a
9.4. Size:69K vishay
sup75n03-04.pdf
SUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Rated Maximum Junction 30 0.00475aRoHS*TemperatureCOMPLIANTTO-220ABDTO-263DRAIN connected to TABGDRAIN connected to TAB G D STop ViewSUB75N03-04G D STop ViewSUP75N03-04SOr
9.5. Size:66K vishay
sup75n04-05l sub75n04-05l.pdf
SUP/SUB75N04-05LVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0055 @ VGS = 10 V 75a400.0065 @ VGS = 4.5 V 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N04-05LTop ViewN-Channel MOSFETSUP75N04-05LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo
9.6. Size:84K vishay
sup75n08-10 sub75n08-10.pdf
SUP/SUB75N08-10Vishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.010 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-10Top ViewN-Channel MOSFETSUP75N08-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
9.7. Size:71K vishay
sup75n06-07l sub75n06-07l.pdf
SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
9.8. Size:72K vishay
sup75n05-06a sub75n05-06a.pdf
SUP/SUB75N05-06ANew ProductVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewN-Channel MOSFETOrdering Information: SUP75N05-06A Ordering Information: SUB75N05-06AABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symb
9.9. Size:88K vishay
sub75n06-07l sup75n06-07l.pdf
SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
9.10. Size:106K vishay
sup75n05-07 sub75n05-07.pdf
SUP/SUB75N05-07New ProductVishay SiliconixN-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 Va55 "75 a55 "750.009 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-07Top ViewN-Channel MOSFETSUP75N05-07ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter S
9.11. Size:106K vishay
sup75n08-09l sub75n08-09l.pdf
SUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V75 "75 a75 "75 a0.011 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-09LTop ViewN-Channel MOSFETSUP75N08-09LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter
9.12. Size:102K vishay
sup75n06-12l sub75n06-12l.pdf
SUP/SUB75N06-12LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.012 @ VGS = 10 V 7560600.014 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-12LTop ViewN-Channel MOSFETSUP75N06-12LABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit
9.13. Size:73K vishay
sup75n06-08 sub75n06-08.pdf
SUP/SUB75N06-08Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
9.14. Size:750K cn vbsemi
sup75n08-10.pdf
SUP75N08-10www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backl
Otros transistores... IRFP344
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History: 2SK2340
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