SUP75P03-07 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SUP75P03-07
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 187 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 160 nC
trⓘ - Время нарастания: 225 ns
Cossⓘ - Выходная емкость: 1565 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для SUP75P03-07
SUP75P03-07 Datasheet (PDF)
sub75p03-07 sup75p03-07.pdf
SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In
sub75p03-07 sup75p03-07.pdf
SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In
sup75p03-08 sub75p03-08.pdf
SUP/SUB75P03-08Vishay SiliconixP-Channel 30-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)30 0.008 75aSTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB75P03-08Top ViewP-Channel MOSFETSUP75P03-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 2
sup75p05-08 sup75p05-08 sub75p05-08.pdf
SUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)55 0.008 75aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB75P05-08SUP75P05-08 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS
sup75n06-08 sub75n06-08.pdf
SUP/SUB75N06-08N-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75aContinuous
sup75n03-07 sub75n03-07.pdf
SUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 V 75a30300.01 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N03-07Top ViewN-Channel MOSFETSUP75N03-07ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra
sup75n05-06 sub75n05-06.pdf
SUP/SUB75N05-06Vishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-06Top ViewN-Channel MOSFETSUP75N05-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75a
sup75n03-04.pdf
SUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Rated Maximum Junction 30 0.00475aRoHS*TemperatureCOMPLIANTTO-220ABDTO-263DRAIN connected to TABGDRAIN connected to TAB G D STop ViewSUB75N03-04G D STop ViewSUP75N03-04SOr
sup75n04-05l sub75n04-05l.pdf
SUP/SUB75N04-05LVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0055 @ VGS = 10 V 75a400.0065 @ VGS = 4.5 V 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N04-05LTop ViewN-Channel MOSFETSUP75N04-05LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo
sup75n08-10 sub75n08-10.pdf
SUP/SUB75N08-10Vishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.010 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-10Top ViewN-Channel MOSFETSUP75N08-10ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
sup75n06-07l sub75n06-07l.pdf
SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
sup75n05-06a sub75n05-06a.pdf
SUP/SUB75N05-06ANew ProductVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)50 0.006 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewN-Channel MOSFETOrdering Information: SUP75N05-06A Ordering Information: SUB75N05-06AABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symb
sub75n06-07l sup75n06-07l.pdf
SUP/SUB75N06-07LVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY 175 C Rated Maximum Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)Available0.0075 at VGS = 10 V RoHS*6075a0.0085 at VGS = 4.5 V COMPLIANTTO-220ABDTO-263DRAIN connected to TAB GG D STop ViewG D SSUB75N06-07LTop ViewSSUP75N06-07LN-Channel MOSFET
sup75n05-07 sub75n05-07.pdf
SUP/SUB75N05-07New ProductVishay SiliconixN-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.007 @ VGS = 10 Va55 "75 a55 "750.009 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N05-07Top ViewN-Channel MOSFETSUP75N05-07ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter S
sup75n08-09l sub75n08-09l.pdf
SUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V75 "75 a75 "75 a0.011 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N08-09LTop ViewN-Channel MOSFETSUP75N08-09LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter
sup75n06-12l sub75n06-12l.pdf
SUP/SUB75N06-12LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.012 @ VGS = 10 V 7560600.014 @ VGS = 4.5 V 70DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-12LTop ViewN-Channel MOSFETSUP75N06-12LABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit
sup75n06-08 sub75n06-08.pdf
SUP/SUB75N06-08Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.008 75aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB75N06-08Top ViewN-Channel MOSFETSUP75N06-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 75
sup75n08-10.pdf
SUP75N08-10www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETaVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0065at VGS = 10 V 8080 0.0070at VGS = 6.0 V 75 17.1 nCAPPLICATIONS0.0085at VGS = 4.5 V 65 Primary Side SwitchingTO-220AB Synchronous RectificationD DC/AC Inverters LED Backl
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100