SUP75P03-07. Аналоги и основные параметры
Наименование производителя: SUP75P03-07
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 187 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 225 ns
Cossⓘ - Выходная емкость: 1565 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для SUP75P03-07
- подборⓘ MOSFET транзистора по параметрам
SUP75P03-07 даташит
..1. Size:143K vishay
sub75p03-07 sup75p03-07.pdf 

SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.007 at VGS = - 10 V 75 RoHS* - 30 COMPLIANT 0.010 at VGS = - 4.5 V 75 TO-263 TO-220AB S G D S Top View DRAIN connected to TAB SUB75P03-07 G G D S Top View SUP75P03-07 Ordering In
..2. Size:144K vishay
sub75p03-07 sup75p03-07.pdf 

SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.007 at VGS = - 10 V 75 RoHS* - 30 COMPLIANT 0.010 at VGS = - 4.5 V 75 TO-263 TO-220AB S G D S Top View DRAIN connected to TAB SUB75P03-07 G G D S Top View SUP75P03-07 Ordering In
4.1. Size:55K vishay
sup75p03-08 sub75p03-08.pdf 

SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.008 75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 2
9.1. Size:72K 1
sup75n06-08 sub75n06-08.pdf 

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous
9.2. Size:67K vishay
sup75n03-07 sub75n03-07.pdf 

SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 30 30 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Dra
9.3. Size:74K vishay
sup75n05-06 sub75n05-06.pdf 

SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a
9.4. Size:69K vishay
sup75n03-04.pdf 

SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Rated Maximum Junction 30 0.004 75a RoHS* Temperature COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G DRAIN connected to TAB G D S Top View SUB75N03-04 G D S Top View SUP75N03-04 S Or
9.5. Size:66K vishay
sup75n04-05l sub75n04-05l.pdf 

SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 40 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L Top View N-Channel MOSFET SUP75N04-05L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo
9.6. Size:84K vishay
sup75n08-10 sub75n08-10.pdf 

SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View N-Channel MOSFET SUP75N08-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75
9.7. Size:71K vishay
sup75n06-07l sub75n06-07l.pdf 

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET
9.8. Size:72K vishay
sup75n05-06a sub75n05-06a.pdf 

SUP/SUB75N05-06A New Product Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View N-Channel MOSFET Ordering Information SUP75N05-06A Ordering Information SUB75N05-06A ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symb
9.9. Size:88K vishay
sub75n06-07l sup75n06-07l.pdf 

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET
9.10. Size:106K vishay
sup75n05-07 sub75n05-07.pdf 

SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.007 @ VGS = 10 V a 55 "75 a 55 "75 0.009 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-07 Top View N-Channel MOSFET SUP75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter S
9.11. Size:106K vishay
sup75n08-09l sub75n08-09l.pdf 

SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L Top View N-Channel MOSFET SUP75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter
9.12. Size:102K vishay
sup75n06-12l sub75n06-12l.pdf 

SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 60 60 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET SUP75N06-12L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit
9.13. Size:73K vishay
sup75n06-08 sub75n06-08.pdf 

SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75
9.14. Size:750K cn vbsemi
sup75n08-10.pdf 

SUP75N08-10 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backl
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