SUP85N03-3M6P Todos los transistores

 

SUP85N03-3M6P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUP85N03-3M6P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO-220AB

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SUP85N03-3M6P datasheet

 ..1. Size:95K  vishay
sup85n03-3m6p.pdf pdf_icon

SUP85N03-3M6P

SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0036 at VGS = 10 V 85d TrenchFET Power MOSFET 30 67 0.0044 at VGS = 4.5 V 85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Second

 ..2. Size:873K  cn vbsemi
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SUP85N03-3M6P

SUP85N03-3M6P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View

 5.1. Size:63K  1
sup85n03-07p sub85n03-07p.pdf pdf_icon

SUP85N03-3M6P

SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

 5.2. Size:70K  vishay
sub85n03-04p sup85n03-04p sup85n03-04p.pdf pdf_icon

SUP85N03-3M6P

SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature 0.0043 @ VGS = 10 V 85a D TO-263 (D2PAK) 100% Rg Tested 30 30 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 (D2PAK) G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P Top View N

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