MMBF0202PLT1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF0202PLT1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de MMBF0202PLT1 MOSFET
- Selecciónⓘ de transistores por parámetros
MMBF0202PLT1 datasheet
mmbf0202plt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF0202PLT1/D MMBF0202PLT1 Low rDS( Motorola Preferred Device on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P CHANNEL ENHANCEMENT MODE Part of the GreenLine Portfolio of devices with energy con- TMOS MOSFET serving traits. rDS(on) = 1.4 OHM These miniature surface mount MOSFETs
mmbf0202plt1.pdf
MMBF0202PLT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are 300 mAMPS, 20 VOLTS dc-dc converters, power management in portable and RDS(on) = 1.4 W batter
mmbf0202.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF0202PLT1/D MMBF0202PLT1 Low rDS( Motorola Preferred Device on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P CHANNEL ENHANCEMENT MODE Part of the GreenLine Portfolio of devices with energy con- TMOS MOSFET serving traits. rDS(on) = 1.4 OHM These miniature surface mount MOSFETs
mmbf0201.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF0201N/D MMBF0201N Low rDS( on) Small-Signal MOSFETs Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors N CHANNEL These miniature surface mount MOSFETs utilize Motorola s High ENHANCEMENT MODE Cell Density, HDTMOS process. Low rDS(on) assures minimal TMOS MOSFET power loss and conserves en
Otros transistores... SM2603PSC, SM2A01NSFP, SM2A02NSU, SM2A06NSFP, MM15N050P, MM20N050P, MM68N06K, MM9N090P, AO4407, MMBF2202PT1, MMBFJ108, MMBFJ110, MMBFJ111, MMBFJ112, MMBFJ113, MMBFJ305, MMD50R380PRH
History: RJK4034DJE | 4N80G-TM3-T | TMU6N65G
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