MMBF0202PLT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBF0202PLT1
   Código: P3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 2.7 nC
   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET MMBF0202PLT1

MMBF0202PLT1 Datasheet (PDF)

..1. Size:165K motorola
mmbf0202plt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0202PLT1/DMMBF0202PLT1Low rDS(Motorola Preferred Deviceon) Small-Signal MOSFETsTMOS Single P-ChannelField Effect TransistorsPCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.4 OHMThese miniature surface mount MOSFETs

..2. Size:164K onsemi
mmbf0202plt1.pdf

MMBF0202PLT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsP-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andRDS(on) = 1.4 Wbatter

6.1. Size:190K motorola
mmbf0202.pdf

7.1. Size:178K motorola
mmbf0201.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0201N/DMMBF0201NLow rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsNCHANNELThese miniature surface mount MOSFETs utilize Motorolas HighENHANCEMENTMODECell Density, HDTMOS process. Low rDS(on) assures minimalTMOS MOSFETpower loss and conserves en

7.2. Size:140K motorola
mmbf0201nlt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0201NLT1/DMMBF0201NLT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsNCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.0 OHMThese miniature surface mount MOSFETs ut

7.3. Size:62K onsemi
mmbf0201nlt1-d.pdf

MMBF0201NLT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS - 20 VOLTSdc-dc converters, power management in portable andRDS(on) = 1 Wbattery

7.4. Size:164K onsemi
mmbf0201nl mvmbf0201nl.pdf

MMBF0201NL,MVMBF0201NLPower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23www.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assure300 mAMPS - 20 VOLTSminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications areRDS(on) = 1 Wdc-dc converters, power management in portable andbattery-powered

7.5. Size:878K cn vbsemi
mmbf0201nlt1g.pdf

MMBF0201NLT1Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

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