MMBF0202PLT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF0202PLT1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MMBF0202PLT1 MOSFET
MMBF0202PLT1 Datasheet (PDF)
mmbf0202plt1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0202PLT1/DMMBF0202PLT1Low rDS(Motorola Preferred Deviceon) Small-Signal MOSFETsTMOS Single P-ChannelField Effect TransistorsPCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.4 OHMThese miniature surface mount MOSFETs
mmbf0202plt1.pdf

MMBF0202PLT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsP-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andRDS(on) = 1.4 Wbatter
mmbf0202.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0202PLT1/DMMBF0202PLT1Low rDS(Motorola Preferred Deviceon) Small-Signal MOSFETsTMOS Single P-ChannelField Effect TransistorsPCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.4 OHMThese miniature surface mount MOSFETs
mmbf0201.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0201N/DMMBF0201NLow rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsNCHANNELThese miniature surface mount MOSFETs utilize Motorolas HighENHANCEMENTMODECell Density, HDTMOS process. Low rDS(on) assures minimalTMOS MOSFETpower loss and conserves en
Otros transistores... SM2603PSC , SM2A01NSFP , SM2A02NSU , SM2A06NSFP , MM15N050P , MM20N050P , MM68N06K , MM9N090P , P60NF06 , MMBF2202PT1 , MMBFJ108 , MMBFJ110 , MMBFJ111 , MMBFJ112 , MMBFJ113 , MMBFJ305 , MMD50R380PRH .
History: RJK4015DPK | IRFP4332PBF | SM3401
History: RJK4015DPK | IRFP4332PBF | SM3401



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor | fgpf4536 datasheet | p20nm60fp datasheet | 2sc1943