MMBFJ112 Todos los transistores

 ..1. Size:151K  fairchild semi
 mmbfj111 mmbfj112 mmbfj113.pdf

August 2012 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable. MMBFJ111 J111 MMBFJ112 J112 MMBFJ112_SB51338 J113 MMBFJ113 G S SOT-23 G TO-92 Mark

 ..2. Size:488K  fairchild semi
 j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark 6P / 6R / 6S NOTE Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG D

 7.1. Size:178K  fairchild semi
 mmbfj110.pdf

April 2011 MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 This device is designed for digital switching applications 2 where very low on resistance is mandatory. Marking 110 Sourced from process 58. 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -

 8.1. Size:76K  motorola
 mmbfj175.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact

 8.2. Size:56K  motorola
 mmbfj175lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact

 8.3. Size:57K  motorola
 mmbfj177lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper P Channel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Gate Voltage VDG 25 Vdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Reverse Gate Source Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit

 8.4. Size:128K  fairchild semi
 mmbfj108.pdf

J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25

 8.5. Size:728K  fairchild semi
 j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units

 8.6. Size:129K  fairchild semi
 j108 j109 j110 mmbfj108.pdf

J108/J109/J110/MMBFJ108 N-Channel Switch 3 This device is designed for digital switching applications where very low on resistance is mandatory. 2 Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25

 8.7. Size:109K  onsemi
 mmbfj177lt1-d.pdf

MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings

 8.8. Size:105K  onsemi
 mmbfj175lt1.pdf

MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD